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SiC-CVD chlorine-free epitaxial process tail gas FTrPSA recovery method based on alkane and silane reaction

A recovery method and technology for silane, applied in separation methods, chemical instruments and methods, hydrocarbon purification/separation, etc., can solve the problems of waste of refrigeration, high energy consumption, and high processing costs

Active Publication Date: 2021-03-30
ZHEJIANG TIANCAIYUNJI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high content of non-condensable gas components in the SiC-CVD chlorine-free epitaxy tail gas based on the reaction of alkanes and silanes, such as H2 and CH4, a large amount of cooling capacity is wasted, energy consumption is high, and the cost of processing is also very high. High, generally not used in industry

Method used

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  • SiC-CVD chlorine-free epitaxial process tail gas FTrPSA recovery method based on alkane and silane reaction
  • SiC-CVD chlorine-free epitaxial process tail gas FTrPSA recovery method based on alkane and silane reaction
  • SiC-CVD chlorine-free epitaxial process tail gas FTrPSA recovery method based on alkane and silane reaction

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Effect test

Embodiment 1

[0048] Such as figure 1 As shown, a SiC-CVD chlorine-free epitaxial process tail gas FTrPSA recovery method based on the reaction of alkane and silane, the specific implementation steps include,

[0049] (1) Raw material gas, with propane (C3H8) as the main carbon (C) source and silane (SiH4) as the silicon (Si) source for chemical vapor deposition (CVD) preparation based on silicon carbide (SiC) epitaxial growth chlorine-free process The tail gas in the air is mainly composed of hydrogen (H2), methane (CH4), silane (SiH4), propane (C3H8), and trace amounts of carbon monoxide (CO), carbon dioxide (CO2), higher hydrocarbons (CnHm), and dioxide Silicon (SiO2) and carbon (C) fine particles, normal pressure and temperature.

[0050] (2) Pretreatment, the raw material gas is pressurized to 0.2~0.3MPa and sent to the pretreatment unit consisting of dust collector, particle removal filter and oil mist collector to remove dust, particles, oil mist and some High hydrocarbon impuritie...

Embodiment 2

[0060] Such as figure 2 As shown, on the basis of Example 1, in the desorption step of the adsorption tower of the shallow cold pressure swing adsorption concentration process, after the end of the adsorption tower adsorption step and before the equal pressure drop or the parallel discharge step begins, adopt the rectification process from the middle and shallow cold Replace the SiH4-enriched overhead gas of the rectification tower-2 in the process or the SiH4 product gas (purity 99.99%) from the silane purification process to increase the concentration of SiH4 in this process to 99.99%, and the yield increased by 2% .

Embodiment 3

[0062] Such as image 3As shown, on the basis of Example 1, the feed gas from the pretreatment is pressurized and sent to the shallow cold pressure swing adsorption concentration process composed of the two-stage PSA system, that is, the feed gas from the pretreatment process is pressurized to 0.2~0.3MPa, it enters from the bottom of the first PSA adsorption tower (first stage PSA), and the non-adsorbed phase gas flowing out from the top of the first stage PSA tower is methane hydrogen gas, which enters the next process, that is, adsorption purification, from the first stage PSA The desorption gas flowing out from the desorption at the bottom of the tower (reverse discharge, flushing or vacuuming) is sent to the bottom of the second PSA adsorption tower (2-stage PSA) through the blower, and the enriched non-adsorbed phase methane and hydrogen mixture flows out from the top of the 2-stage PSA tower Intermediate gas, return to the 1st stage PSA feed gas - the pretreated raw mate...

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Abstract

The invention discloses a SiCCVD chlorine-free epitaxial process tail gas FTrPSA recovery method based on alkane and silane reaction, which comprises the following steps: pretreatment, shallow coolingpressure swing adsorption concentration, adsorption purification, pressure swing adsorption hydrogen extraction, hydrogen purification, medium-shallow temperature condensation, medium-shallow coolingrectification, propane refining and silane purification. H2, silane, C2+(propane) and methane in the chlorine-free SiCCVD epitaxial process tail gas based on alkane and silane reaction are recycled at high purity and high yield and returned to the SiCCVD process to be recycled, so that all components (effective components) of the chlorine-free SiCCVD epitaxial process tail gas are recycled, and tail gas emission is reduced; the invention fills the blank of a SiC epitaxial process tail gas treatment technology.

Description

technical field [0001] The invention relates to the extraction and purification preparation of hydrogen (H2), silane (SiH4), methane (CH4) / propane (C3H8) during the chlorine-free epitaxy growth process of the third-generation semiconductor material silicon carbide (SiC) and the recovery of H2 from epitaxy tail gas , SiH4, C3H8 reused semiconductor materials and semiconductor manufacturing process environmental protection, more specifically, it involves a SiC-CVD (silicon carbide chemical vapor deposition) chlorine-free epitaxy process tail gas FTrPSA (full temperature variable) based on the reaction of alkane and silane pressure adsorption) recovery method. Background technique [0002] As a third-generation semiconductor material, silicon carbide (SiC) has been widely used in IT and consumer electronics, automobiles, photovoltaics, Nuclear reactors, and power electronic components such as power switches, frequency conversion and voltage conversion, and UPS in aerospace and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B3/50C01B33/04C07C7/00C07C7/04C07C7/12C07C7/13C07C9/04C07C9/08B01D53/047B01D53/00B01D3/32B01D3/14
CPCC01B3/50C01B33/046C07C7/005C07C7/04C07C7/12C07C7/13B01D53/047B01D53/002B01D3/14B01D3/32C01B2203/0465C01B2203/048C01B2203/042C01B2203/0405C01B2203/046B01D2253/102B01D2253/106C07C9/04C07C9/08Y02P70/10
Inventor 汪兰海钟娅玲钟雨明陈运唐金财蔡跃明
Owner ZHEJIANG TIANCAIYUNJI TECH CO LTD
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