Manufacturing method of semiconductor device

Abstract

The invention provides a manufacturing method of a semiconductor device. The method comprises the following steps of providing a semiconductor structure which comprises a dielectric layer and a metallayer, and the metal layer is formed on a part of the surface of the dielectric layer; forming an oxide layer on the dielectric layer and the metal layer; forming a passivation layer on the oxide layer; and performing an alloying process on the semiconductor structure. According to the manufacturing method of the semiconductor device provided by the invention, the alloy process is set after the deposition process of the passivation layer by adjusting the process flow of the semiconductor structure, so surface bulges generated by a metal layer in the semiconductor structure due to over-high temperature and over-high internal stress in subsequent etching or other processes are reduced, and the yield of the semiconductor device is improved; and therefore, the product yield is improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for manufacturing a semiconductor device. Background technique [0002] Metal aluminum (Al) has the characteristics of low resistivity, good overcurrent density and easy patterning process. As the main component of wire metal, it is widely used in the semiconductor back-end process. In the manufacture of semiconductor integrated circuits, the sputtering deposition process in physical vapor deposition (PVD) is usually used to produce metal films, that is, argon (Ar) is introduced into the vacuum reaction chamber and ionized into argon ions (i.e., Ar + ), the argon ions are accelerated to bombard the target (i.e. the target metal) as the cathode under the action of the electric field in the vacuum reaction chamber, so that the atoms or molecules of the target metal have a momentum transfer phenomenon, and obtain enough momentum to break away from the target ...

AI Technical Summary

Problems solved by technology

The existence of the surface bumps will affect the reliability of the semiconductor device, and even lead to a short circuit in severe cases, or cause troubles to the wiring problem of the chip package

[0004] In addition, in the existing process, after the top metal (Top metal) etching process, the alloy process (Alloy) will be carried out to repair the defects in the back segment and optimize the performance of the semiconductor device, but the alloy process will also cause Generation of the surface protrusions

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