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Space conversion substrate based on silicon through hole and redistribution circuit layer and preparation method thereof

A technology of space conversion and rewiring, which is applied in semiconductor/solid-state device manufacturing, circuits, electric solid-state devices, etc., can solve the problems of scale limitation, high manufacturing cost, and long manufacturing cycle, so as to improve stability and life, The effect of increasing the number of repeated loading and unloading and reducing the manufacturing cycle

Pending Publication Date: 2021-01-29
南京芯聚群集成电路测试有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a space conversion substrate based on through-silicon vias and redistribution wiring layers and its preparation method, which is used to solve the problem of scaling the space conversion substrate in the prior art. Constraints and issues of high manufacturing costs and long manufacturing cycles to meet the needs of next or several generations of wafer and wafer electrical testing

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  • Space conversion substrate based on silicon through hole and redistribution circuit layer and preparation method thereof
  • Space conversion substrate based on silicon through hole and redistribution circuit layer and preparation method thereof
  • Space conversion substrate based on silicon through hole and redistribution circuit layer and preparation method thereof

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Embodiment Construction

[0056] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0057] For example, when describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not limit the protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth sho...

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Abstract

The invention provides a space conversion substrate based on a silicon through hole and a redistribution circuit layer and a preparation method thereof, and the substrate comprises a base with a silicon through hole, and the surface of the base is covered with a silicon dioxide layer with an opening; the space conversion substrate further comprises a redistribution electronic circuit layer which comprises a first connecting surface, a second connecting surface and an electronic wiring layer structure, the first connecting surface is provided with a first electronic connection with a first interval, the first electronic connection is connected with the silicon through hole through the opening, the second connecting surface is provided with a second electronic connection with a second interval, and the second interval is larger than the first interval; a probe connecting layer is formed on the silicon through hole, and a metal bump is formed on the second electronic connection; and insersion circuit boards are bonded to the redistribution electronic circuit layer. The invention provides an advanced structure and a manufacturing process of a space conversion substrate compatible witha wafer manufacturing process, the wafer and chip micro-scale electronic connection can be synchronously and continuously reduced, and the requirements of wafer and chip electronic test of a next generation high-performance application chip, a notebook computer, a server chip and the like are met.

Description

technical field [0001] The invention belongs to the field of semiconductor testing equipment, in particular to a structure and a preparation method of a space conversion substrate based on through-silicon vias and redistribution circuit layers, which are used in the manufacture of advanced probe cards to realize wafers in microelectronics manufacturing links and wafer electrical testing Background technique [0002] In the semiconductor industry chain, wafer and wafer testing provides testing of the electrical function of the wafer, and feeds back test data to the front-end manufacturing process of the fab to improve the process or ensure yield; at the same time, wafer testing can be performed on silicon chips Before entering the final packaging, silicon wafers with poor electrical functions are filtered out to avoid defective products from increasing manufacturing costs. The probe card is the core component of the wafer and wafer testing process, which provides the electri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544H01L23/485H01L21/60G01R31/28G01R3/00G01R1/073
CPCH01L22/32H01L24/03H01L23/4824G01R31/2889G01R3/00G01R1/073H01L2224/16225
Inventor 张银华黄士芬
Owner 南京芯聚群集成电路测试有限公司
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