Method for preparing few-layer Ti3C2Tx material with high etching rate and high stripping rate based on secondary etching method

Abstract

The invention discloses a method for preparing a few-layer Ti3C2Tx material with high etching rate and high stripping rate based on a secondary etching method. The method specifically comprises the following steps: pre-etching Ti3AlC2 with an HF aqueous solution to obtain a pre-etched product; preparing a salt solution formed after the reaction of LiF and HCl as a secondary etching agent; immersing the pre-etched product in the secondary etching agent for secondary etching to obtain a secondary etched product; and processing the secondary etched product to obtain the few-layer Ti3C2Tx materialwith high etching rate and high stripping rate. According to the method for preparing the few-layer Ti3C2Tx material with the high etching rate and the high stripping rate based on the secondary etching method, efficient stripping and dispersion of few-layer Ti3C2Tx in the aqueous solution are achieved, long-time ultrasonic stripping does not need to be conducted on Ti3C2Tx in the later period, the preparation efficiency and product performance of the few-layer Ti3C2Tx are improved, and the functionalized application range is enlarged.

Description

technical field [0001] The invention belongs to the technical field of 2D nanomaterials, and relates to the preparation of few-layer Ti with high etching rate and high stripping rate based on a secondary etching method 3 C 2 T x material method. Background technique [0002] Two-dimensional layered transition metal carbide nanosheets Ti 3 C 2 T x With good conductivity and hydrophilicity, it can be used in lithium-ion batteries, supercapacitors, catalysts, sensors, reinforcement materials in polymers, adsorption materials and electromagnetic interference shielding and other fields. Ti 3 C 2 T x By etchant (such as HF, LiF+HCl salt solution, NH 4 HF 2 etc.) will Ti 3 AlC 2 The Al atoms in the phase are removed, where T x means Ti 3 AlC 2 Functional groups (-OH, -F, =O) attached to the surface after being etched. [0003] Currently, Ti 3 C 2 T x Nanosheets are mainly prepared by etching, ultrasonic / intercalation, and exfoliation. The existing etching techno...

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Problems solved by technology

[0008] Therefore, in order to solve the above few-layer Ti 3 C 2 T x In the preparation method of the method, there are problems such as long etching period, incomplete etching and low stripping rate, and it is necessary to provide a high-concentration and few-layer Ti 3 C 2 T x A novel preparation method for nanosheet materials that enables few-layer Ti 3 C 2 T x High-efficiency stripping and dispersion in aqueous solution, no need for later treatment of Ti 3 C 2 T x Long-term ultrasonic stripping to improve Ti 3 C 2 T x The preparation efficiency and product performance, expanding the Ti 3 C 2 T x range of functional applications

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