Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lattice mismatch type three-junction gallium arsenide solar cell and manufacturing method

A technology of lattice mismatch and solar cells, applied in the field of solar cells, can solve problems such as incomplete stress release, many production steps, and long growth time, and achieve the effect of reducing product production cycle and reducing damage

Active Publication Date: 2020-12-04
NANCHANG KAIXUN PHOTOELECTRIC CO LTD
View PDF9 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] (1) There are many production steps and the growth time is long;
[0004] (2) Baking during the growth process reduces the performance of the midsole tunnel junction;
[0005] (3) Incomplete stress release may easily cause epitaxial wafer warping;
[0006] (4) Crystal quality is not good enough

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lattice mismatch type three-junction gallium arsenide solar cell and manufacturing method
  • Lattice mismatch type three-junction gallium arsenide solar cell and manufacturing method
  • Lattice mismatch type three-junction gallium arsenide solar cell and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] S1: On the P-type Ge substrate, at 720 ℃, by PH 3 In the form of diffusion, the bottom cell is formed emitter region, the emitter region having a thickness of 0.1 m, then the temperature was lowered to 640 deg.] C, growing GaInP nucleation layer thickness of 0.01 m, while the nucleation layer as a window layer of the bottom cell;

[0037] S2: temperature was raised to 650 ℃, the growth of GaAs / In0.01 GaAs buffer layer, GaAs with a thickness of 0.1μm, In 0.01 GaAs having a thickness of 0.1 m;

[0038] S3: temperature was lowered to 560 ℃, growth tunneling junction midsole, midsole tunneling became N ++ GaAs / P ++ GaAs structure, in which N ++ GaAs is a thickness of 0.01μm, a doping concentration of 1 × 10 19 / cm 3 , The dopant is a combination of Si and Te; P ++ GaAs is a thickness of 0.01μm, a doping concentration of 2 × 10 19 / cm 3 Dopant are C;

[0039] S4: temperature was raised to 650 ℃, the growth of GaAs buffer layer, GaAs buffer layer having a thickness of 0.2μm...

Embodiment 2

[0047] S1: On the P-type Ge substrate, at 720 ℃, by PH 3 In the form of diffusion, the bottom cell is formed emitter region, the emitter region having a thickness of 0.3 m, then the temperature was lowered to 640 deg.] C, the growth of AlGaInP nucleation layer, the thickness of 0.02 m, while the nucleation layer as a window layer of the bottom cell;

[0048] S2: temperature was raised to 650 ℃, the growth of GaAs / In 0.01 GaAs buffer layer, GaAs with a thickness of 0.1μm, In 0.01 GaAs thickness of 0.4 m;

[0049] S3: temperature was lowered to 560 ℃, growth tunneling junction midsole, midsole tunneling became N ++ GaAs / P ++ GaAs structure, in which N ++ GaAs is a thickness of 0.02μm, a doping concentration of 3 × 10 19 / cm 3 , The dopant is a combination of Te and Se; P ++ GaAs is a thickness of 0.02μm, a doping concentration of 5 × 10 19 / cm 3 , A Zn dopant;

[0050] S4: temperature was raised to 650 ℃, the growth of GaAs buffer layer, GaAs buffer layer having a thickness of...

Embodiment 3

[0058] S1: On the P-type Ge substrate, at 720 ℃, by PH 3 In the form of diffusion, the bottom cell is formed emitter region, the emitter region of the thickness of 0.4 m, and then temperature was lowered to 640 deg.] C, growing GaInP nucleation layer thickness of 0.03 m, while the nucleation layer as a window layer of the bottom cell;

[0059] S2: temperature was raised to 650 ℃, the growth of GaAs / In 0.01 GaAs buffer layer, GaAs with a thickness of 0.8μm, In 0.01 GaAs thickness of 0.8 m;

[0060] S3: temperature was lowered to 560 ℃, growth tunneling junction midsole, midsole tunneling became N ++ GaAs / P ++ GaAs structure, in which N ++ GaAs is a thickness of 0.03μm, a doping concentration of 5 × 10 19 / cm 3 , The dopant is a combination of Si and Se; P ++ GaAs is a thickness of 0.03μm, a doping concentration of 1 × 10 20 / cm 3 , Dopant of Mg;

[0061] S4: temperature was raised to 650 ℃, the growth of GaAs buffer layer, GaAs buffer layer having a thickness of 0.6μm, a dopi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a lattice mismatch type three-junction gallium arsenide solar cell and a manufacturing method thereof. The lattice mismatch type three-junction gallium arsenide solar cell sequentially comprises a Ge substrate, a bottom cell, a GaAs / InGaAs buffer layer, an insole tunneling junction, a GaAs buffer layer, an In(Al)GaAs buffer layer, a DBR, a middle cell, a middle top tunneling junction, a top cell and a cap layer from bottom to top. The In(Al)GaAs buffer layer is composed of an InAlAs nucleating layer, an InAlAs buffer layer, a superlattice, InAlGaAs with low Al components and InGaAs; and the cap layer is composed of InGaAs and GaAs. By introducing the InAlGaAs buffer layer, stress can be effectively released, dislocation can be effectively filtered, the lattice constant of an epitaxial material can rapidly reach a target value, the production cycle of a product is shortened, damage to an insole tunneling junction is reduced and the like under the condition that the crystal quality of a solar cell material is guaranteed, and meanwhile, the warping condition of the whole epitaxial wafer is adjusted through the thickness of GaAs in the cap layer, and a flat epitaxial wafer can be obtained.

Description

Technical field [0001] The present invention relates to the field of solar cell technology, particularly to a lattice mismatch type triple-junction GaAs solar cells and production methods. Background technique [0002] Since October 4, 1957, since the world's first man-made earth satellite "Satellite 1" into space, in just a few decades, space technology has made tremendous progress, power supply systems for spacecraft , high reliability, long life and miniaturization is also proposed new requirements. GaAs solar cells have higher photoelectric conversion efficiency, better temperature performance, more space radiation resistance, successfully replaced Si solar cells, to become my country's spacecraft, such as satellites, spacecraft, space lab, etc. high performance and long life of the common space in the main power supply. In China, after several generations of aerospace continuous efforts, the lattice matching type GaInP / InGaAs / Ge triple-junction solar cell conversion effi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0304H01L31/0352H01L31/078H01L31/18
CPCH01L31/03042H01L31/03046H01L31/035236H01L31/03529H01L31/078H01L31/1844H01L31/1852Y02E10/544Y02P70/50
Inventor 徐培强张银桥王向武潘彬
Owner NANCHANG KAIXUN PHOTOELECTRIC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com