High-quality non-polar AlGaN micro-nano composite structure and processing method thereof

Abstract

The invention relates to a high-quality non-polar AlGaN micro-nano composite structure. The high-quality non-polar AlGaN micro-nano composite structure comprises a substrate, a columnar solid dielectric array structure and a porous non-polar AlxGa1-xN layer. According to the method, the internal stress of the non-polar AlGaN surface can be remarkably reduced, so that the source of dislocation generated by the non-polar AlGaN is greatly weakened, the dislocation density of the non-polar AlGaN is effectively reduced, and the crystal quality is effectively improved. The high-quality non-polar AlGaN micro-nano composite structure can also adapt to the change of stress anisotropy of non-polar AlGaN under different Al component conditions, and the problem of non-polar AlGaN caused by anisotropyof surface internal stress is solved to the maximum extent. By using the composite structure, a high-quality non-polar AlGaN-based thin film can be further grown, the composite structure is widely applied to preparation of non-polar AlGaN-based ultraviolet and deep ultraviolet light-emitting devices and ultraviolet and solar blind detection devices, the performance and stability of the prepared devices can be remarkably improved, and the service life of the prepared devices can be remarkably prolonged.

Description

technical field [0001] The invention relates to the field of electronic information engineering, in particular to a high-quality nonpolar AlGaN micro-nano composite structure and a processing method thereof. Background technique [0002] The third-generation semiconductors represented by GaN and SiC have developed rapidly in recent years because of their wide bandgap, high electron mobility, high breakdown voltage, good high temperature resistance, and radiation resistance. GaN-based materials are direct bandgap materials, which can be used to prepare light-emitting and optoelectronic devices, and their forbidden band width can be continuously adjusted according to the requirements through the molar composition of Al and In in its ternary and quaternary alloys of the same family. where Al x Ga 1-x The band gap of N material can be adjusted by adjusting the molar composition of Al x The band gap can be continuously changed from 6.2 eV of AlN to 3.4 eV of GaN, which can cov...

AI Technical Summary

Problems solved by technology

[0005] The existence of the above problems seriously restricts the development of current non-polar AlGaN-based ultraviolet and deep ultraviolet light-emitting devices and photodetection devices. How to obtain non-polar AlGaN with high quality and low dislocation density at a low cost has become the goal pursued by the current industry. It is also the key to bringing non-polar AlGaN-based ultraviolet and deep ultraviolet optoelectronic devices to the market

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