Controllable preparation method of high-density single-walled carbon nanotube horizontal array

A single-walled carbon nanotube, high-density technology, applied in the field of nanomaterials, can solve the problems of low horizontal array density of single-walled carbon nanotubes, uneven quality of finished products, and no controllable preparation method, and achieve controllable preparation. , the finished product is of good quality and the preparation method is simple.

Active Publication Date: 2020-11-17
WENZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a controllable preparation method of a high-density single-walled carbon nanotube horizontal array, to solve the problem that there is no controllable preparation method at the present stage, the technology is immature, the quality of finished products is uneven, and large-scale production and application have not yet been carried out. Technical issues such as catalyst deactivation during growth and low density of single-walled carbon nanotube horizontal arrays

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  • Controllable preparation method of high-density single-walled carbon nanotube horizontal array
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  • Controllable preparation method of high-density single-walled carbon nanotube horizontal array

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Embodiment 1

[0052] A controllable preparation method of a high-density single-walled carbon nanotube horizontal array of the present invention comprises the following steps:

[0053] Step 1, processing the growth substrate, and loading a catalyst on the processed growth substrate;

[0054] Processing the growth substrate includes the following steps:

[0055] S1, in order to clean the ST-cut quartz substrate and repair the lattice defects generated during the production and processing of the growth substrate, the growth substrate was ultrasonically cleaned in ultrapure water, acetone, ethanol, and ultrapure water in sequence, and the cleaning time was controlled 10min in each cleaning solution;

[0056] Wherein, the growth substrate is one of ST-cut quartz, r-cut quartz, a-plane α-alumina, r-plane α-alumina and magnesium oxide. ST-cut quartz substrates are preferred. The type of catalyst precursor is Fe or Co or Ni or Ru or Rh or Pd, and the particle size of the catalyst is 1 nm-3 nm. ...

Embodiment 2

[0074] Embodiment 2, a controllable preparation method of a high-density single-walled carbon nanotube horizontal array, is the same as Embodiment 1, except that:

[0075] Fe(OH) used 3 / EtOH solution was replaced by NiCl 2 NiCl at a concentration of 0.05 mmol / L 2 / EtOH solution, it was drawn on the ST-cut quartz substrate, that is, the Ni-containing catalyst was loaded on the surface of the ST-cut quartz substrate.

[0076] The growth result of the horizontal array of high-density single-walled carbon nanotubes obtained in Example 2 is as follows Figure 2d shown. It can be seen from the figure that the SEM picture clearly shows that the density of the horizontal array of single-walled carbon nanotubes obtained in this embodiment exceeds 50 / micron.

[0077] The invention also provides a field effect transistor device containing a horizontal array of high-density single-walled carbon nanotubes.

[0078] The invention also provides the application of the horizontal array ...

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Abstract

The invention discloses a controllable preparation method of a high-density single-walled carbon nanotube horizontal array, which comprises the following steps: step 1, treating a growth substrate, and loading a catalyst on the treated growth substrate, wherein the step of treating the growth substrate comprises the following sub-steps: S1, ultrasonically cleaning the growth substrate in ultrapurewater, acetone, ethanol and ultrapure water in sequence; S2, conducting blow-drying with high-purity nitrogen; and S3, putting the cleaned substrate into a muffle furnace, carrying out high-temperature annealing in air, conducting heating to 900 DEG C within 2 hours, keeping the temperature constant for 8 hours at 900 DEG C, conducting cooling to 300 DEG C within 10 hours, and naturally conducting cooling. The preparation method disclosed by the invention is simple, high in operation yield and good in finished product quality, and has a very high popularization value. A catalyst reactivationmethod is provided, the problem of catalyst carbon coating is solved, the characteristic that high-carbon-capacity metal has large carbon capacity change in the temperature disturbance process is utilized, outer coating carbon of the catalyst is fused and reactivated, and therefore the horizontal array density of the single-walled carbon nanotubes is increased.

Description

technical field [0001] The invention relates to the field of nanomaterials, in particular to a controllable preparation method for a horizontal array of high-density single-walled carbon nanotubes. Background technique [0002] Due to their perfect conjugated tubular structure and excellent physical and chemical properties, single-walled carbon nanotubes have rapidly become the focus of nanomaterial research since they were discovered. Single-walled carbon nanotubes have great potential application value in nanoelectronic materials, energy conversion fields, functional composite materials, and commercial products. Especially in the field of nanoelectronics, studies have shown that the carrier mobility of single-walled carbon nanotubes is about 10 9 A / cm 2 , is 10 times that of single-crystal Si, and field effect transistors (FETs) constructed of single-walled carbon nanotubes have excellent subthreshold slopes. Therefore, single-walled carbon nanotubes are considered ideal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/159C01B32/162H01L51/05B01J23/745B01J23/755B01J37/00
CPCC01B32/159C01B32/162B01J23/745B01J23/755B01J37/00C01P2004/03C01P2004/04H10K10/491Y02P20/584
Inventor 胡悦张红杰钱金杰黄少铭
Owner WENZHOU UNIVERSITY
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