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Binary molybdenum alloy sputtering target material and preparation method thereof

A sputtering target material and molybdenum alloy technology, which is applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc., can solve problems such as easy occurrence of defects and mismatch of physical and chemical properties, and achieve simple process and improved Matching, improving bad effects

Active Publication Date: 2020-10-30
LUOYANG SIFON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the mismatch with some physical and chemical properties of the copper film layer, it is prone to defects

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0022] A method for preparing a binary molybdenum alloy sputtering target, comprising the following steps:

[0023] Step 1: Calculated in parts by mass, take 60-90 parts of molybdenum powder, 5-20 parts of niobium powder, and 5-20 parts of titanium powder, and perform ball milling in an atmosphere of protective gas. The protective gas can be argon or nitrogen. , fully mixed evenly;

[0024] Step 2: Put the material evenly mixed in Step 1 into rubber-coated powder, and then perform cold isostatic pressing to obtain a green body;

[0025] Step 3: wrapping the body obtained in step 2, and performing hot isostatic pressing to obtain a sintered body;

[0026] Step 4: Heating the sintered compact obtained in Step 3 under an atmosphere of protective gas, the protective gas may be argon or nitrogen, then hot rolling, leveling, and finally annealing to obtain a binary molybdenum alloy slab;

[0027] Step 5: Machining the slab obtained in Step 4 according to requirements such as grind...

Embodiment 1

[0034] A method for preparing a binary molybdenum alloy sputtering target, comprising the following steps:

[0035] Step 1. Add molybdenum powder, niobium powder and titanium powder into the V-type mixer in proportions of 80 parts, 10 parts and 10 parts by mass respectively. The purity of molybdenum powder, niobium powder and titanium powder is not less than 99.9%, and passed through a 200-mesh sieve; the argon gas was passed through the mixer as a protective gas, and the machine was started and mixed for 18 hours and then shut down to obtain a mixed powder;

[0036] Step 2. According to the needs, choose a rubber sleeve with a suitable size, put the mixed powder obtained in step 1 into the rubber sleeve, and shake it while loading. After filling the powder, seal the rubber sleeve, and then shape the rubber sleeve. Keep the rubber sleeve in the shape of a cuboid; put the powdered rubber sleeve into a cold isostatic press for pressing, slowly increase the pressure until the max...

Embodiment 2

[0042] Step 1. Add molybdenum powder, niobium powder and titanium powder into the V-type mixer in proportions of 80 parts, 5 parts and 15 parts by mass respectively. The purity of molybdenum powder, niobium powder and titanium powder is not less than 99.9%, and passed through a 200-mesh sieve; the argon gas was passed through the mixer as a protective gas, and the machine was started and mixed for 18 hours and then shut down to obtain a mixed powder;

[0043] Step 2. According to the needs, choose a rubber sleeve with a suitable size, put the mixed powder obtained in step 1 into the rubber sleeve, and shake it while loading. After filling the powder, seal the rubber sleeve, and then shape the rubber sleeve. Keep the rubber sleeve in the shape of a cuboid; put the powdered rubber sleeve into a cold isostatic press for pressing, slowly increase the pressure until the maximum pressure reaches 200MPa, hold the pressure for 5 minutes, then release the pressure, and take out the comp...

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Abstract

The invention provides a binary molybdenum alloy sputtering target material and a preparation method thereof. The sputtering target material comprises the components of, in parts by mass, 60-90 partsof molybdenum powder, 5-20 parts of niobium powder and 5-20 parts of titanium powder, the preparation method comprises the following steps that raw materials of the sputtering target material are evenly mixed, powder filling of a rubber sleeve is carried out, then isostatic cool pressing is carried out, and a green body is obtained; the obtained green body is sheathed, and hot isostatic pressing operation is carried out to obtain a sintered green body; the obtained sintered green body is heated, then hot rolling and leveling are carried out, and finally annealing is carried out to obtain a binary molybdenum alloy plate blank; and the obtained plate blank is subjected to machining such as grinding according to needs, and a final needed product is obtained. According to the binary molybdenumalloy sputtering target material and the preparation method thereof, the produced binary molybdenum alloy sputtering target material can be used for manufacturing a transition layer material used incooperation with a copper film layer in the TFT-LCD manufacturing process, the matching performance of the physical and chemical properties of the transition layer and the copper film layer is improved by adjusting proper binary components, and defects occurring in the TFT manufacturing process are improved.

Description

technical field [0001] The invention belongs to the field of high-purity metal target preparation, and specifically relates to the technical field of a binary molybdenum alloy sputtering target and a preparation method thereof. Background technique [0002] In recent years, TFT-LCD (Thin Film Field Effect Transistor Liquid Crystal Display) display panel technology has developed towards large size, high resolution, high refresh rate, etc., and the corresponding requirements for the conductivity of TFT electrode wiring materials for signal transmission are getting higher and higher. . [0003] Due to the excellent electrical conductivity of copper, it has gradually replaced aluminum as the signal transmission layer. However, copper has the problem of poor adhesion to the glass substrate, and a transition layer needs to be deposited to improve the adhesion of the copper film layer. As a material for forming such a transition layer, sputtering targets are widely used. [0004]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B22F5/00C22C27/04
CPCC23C14/3407C23C14/3414C22C27/04B22F5/00
Inventor 方宏孙虎民宁来元单玉郎张雪凤
Owner LUOYANG SIFON ELECTRONICS
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