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Preparation method and application of rhenium disulfide nano sheet

A technology of rhenium disulfide and nanosheets, applied in chemical instruments and methods, botanical equipment and methods, applications, etc., can solve the problems of preparing nanosheets from rhenium disulfide, achieve excellent catalytic oxidation efficiency, eliminate odor, and excellent crystallization Effects on sex and stability

Inactive Publication Date: 2020-10-20
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] So far, there is no report on the use of rhenium disulfide to prepare nanosheets and use them for photocatalytic sterilization

Method used

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  • Preparation method and application of rhenium disulfide nano sheet
  • Preparation method and application of rhenium disulfide nano sheet
  • Preparation method and application of rhenium disulfide nano sheet

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] The invention provides a preparation method of rhenium disulfide nanosheets, comprising the following steps:

[0052] S1. Select a commercially available sailboat brand glass slide and cut it into a size of 2cm*2cm to be used as the growth substrate of the rhenium disulfide bactericidal material. In this embodiment, commercially available glass slides are selected. Currently, commonly used glass slides are easy to obtain and moderate in size and thickness. The nanosheets made by this method have high portability and are convenient for application in different scenarios.

[0053] S2. The cut transparent glass substrate is ultrasonically cleaned for 15 minutes with a sufficient amount of acetone, absolute ethanol, and deionized water in sequence. The ultrasonic power is 100W and the frequency is 40KHz. After cleaning and blowing dry with a nitrogen gun, place it on a heating platform at 70°C for 5 minutes and use it as a growth substrate for later use.

[0054] S3, weigh...

Embodiment 2

[0069] The difference between embodiment 2 and embodiment 1 is:

[0070] S5. The first temperature zone is heated from room temperature (30°C) to 200°C after 47 minutes, and kept for 24 minutes; the second temperature zone is heated from room temperature (30°C) to 260°C after 10 minutes, kept for 30 minutes, and then passed through The temperature is raised to 550°C in 11 minutes and maintained for 20 minutes. The growth temperature of the material is 550°C; the heating program of the third temperature zone is the same as that of the second temperature zone. Cool down to room temperature naturally after growth.

[0071] In the same preparation method, the gasification temperature of the sulfur source is set at 200°C, and the cracking temperature of the rhenium source is set at 550°C, and rhenium disulfide nanosheets with a vertical morphology can also be obtained, which have a uniform and dense distribution and a large specific surface area. characteristics, and exposed a lar...

Embodiment 3

[0073] The difference between embodiment 3 and embodiment 1 is:

[0074] S5. The first temperature zone is heated from room temperature (30°C) to 200°C after 47 minutes, and kept for 24 minutes; the second temperature zone is heated from room temperature (30°C) to 260°C after 10 minutes, kept for 30 minutes, and then passed through The temperature is raised to 600°C in 11 minutes and maintained for 20 minutes. The growth temperature of the material is 600°C; the heating program of the third temperature zone is the same as that of the second temperature zone. Cool down to room temperature naturally after growth.

[0075] In the same preparation method, the gasification temperature of the sulfur source is set at 200°C, and the cracking temperature of the rhenium source is set at 600°C, and rhenium disulfide nanosheets with a vertical morphology can also be obtained, which have a uniform and dense distribution and a large specific surface area. characteristics, and exposed a lar...

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Abstract

The invention belongs to the technical field of preparation of photocatalytic materials, and discloses a preparation method and application of a rhenium disulfide nano sheet. ReO3 is used as a rheniumsource, sulfur powder is used as a sulfur source, and the rhenium disulfide nano sheet is prepared on a substrate by adopting a chemical vapor deposition method. The method is simple to operate and low in growth temperature; the prepared rhenium disulfide nano sheet is good in crystallinity, stable in physicochemical property and abundant in active sites, and excellent photocatalytic efficiency can be obtained. The prepared rhenium disulfide nano sheet has the characteristic of spontaneous vertical growth, compared with other planar nano materials, the morphology can expose a large number ofedge positions so as to obtain higher-density catalytic active sites and a larger infiltration area, and thus the nano sheet has very high photocatalytic sterilization efficiency.

Description

technical field [0001] The invention relates to the technical field of preparation of photocatalytic materials, in particular to a preparation method and application of rhenium disulfide nanosheets. Background technique [0002] The safety of drinking water is very important to people's daily life. However, with the development of industry and the improvement of human living standards, a large amount of industrial wastewater, domestic sewage and domestic garbage are discharged into water bodies without treatment, which contains a large number of pathogenic bacteria and microorganisms, causing serious water pollution problems . If humans and animals drink this polluted water, it will cause a series of infectious diseases. And the abuse of antibiotics has also caused serious bacterial resistance and environmental pollution. Therefore, developing an efficient, low-cost, and environmentally friendly bactericidal material is still a major challenge at present. [0003] In rec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G47/00B01J27/04A01N59/02A01P1/00A61L9/18C02F1/30C02F1/50B01D53/86B01D53/74B01D53/00A61L101/14
CPCC01G47/00B01J27/04A01N59/02A61L9/18C02F1/30C02F1/50B01D53/86B01D53/74B01D53/007C01P2004/64C01P2004/20A61L2209/21B01J35/23B01J35/39
Inventor 张璋张颖刘元武宋伟铭张旭岩容诗雅
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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