AlGaN-based deep ultraviolet LED epitaxial wafer and preparation method thereof

Abstract

The invention discloses an AlGaN-based deep ultraviolet LED epitaxial wafer and a preparation method thereof. The AlGaN-based deep-ultraviolet LED epitaxial wafer comprises a silicon carbide substrate, an Ag layer deposited on the silicon carbide substrate, an AlN buffer layer grown on the Ag layer, an AlGaN buffer layer grown on the AlN buffer layer, a non-doped AlGaN layer grown on the AlGaN buffer layer, an n-type doped AlGaN layer grown on the non-doped AlGaN layer, an AlGaN multi-quantum well layer grown on the n-type doped AlGaN layer, an electron blocking layer grown on the AlGaN multi-quantum well layer, and a p-type doped GaN film grown on the electron blocking layer. According to the invention, a stripping process is not needed, the external quantum efficiency is greatly improved, dislocation formation can be reduced, the radiation recombination efficiency of carriers is improved, the deep ultraviolet LED with high thermal conductivity, high electric conductivity and high light-emitting performance can be obtained, the current distribution of the deep ultraviolet LED is more uniform, the light extraction efficiency is improved, and the heat dissipation capability is good; and the preparation process is simple and has repeatability.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an AlGaN-based deep ultraviolet LED epitaxial wafer and a preparation method. Background technique [0002] Deep ultraviolet light has broad application prospects in the fields of national defense technology, information technology, biopharmaceuticals, environmental monitoring, public health, sterilization and disinfection. The traditional ultraviolet light sources currently used are gas lasers and mercury lamps, which have the disadvantages of large volume, high energy consumption and pollution. AlGaN-based compound semiconductor ultraviolet light-emitting diode (LED) is a solid-state ultraviolet light source, which has the advantages of small size, high efficiency, long life, environmental friendliness, low energy consumption and no pollution. AlGaN material with high Al composition is an irreplaceable material system for the preparation of high-performance deep-...

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Problems solved by technology

[0004] The object of the present invention is AlGaN-based deep ultraviolet LED epitaxial wafer and its preparation method, aiming to solve the problem that the quality of AlGaN-based deep ultraviolet LED epitaxial wafer needs to be improved in the prior art

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