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Flexible self-supporting single crystal magnetic fe 3 o 4 Preparation of thin film materials, thin film materials and applications, single crystal structure

A thin film material, single crystal structure technology, applied in the direction of material selection, polycrystalline material growth, single crystal growth, etc., can solve the problems of inability to obtain single crystal Fe thin film, inability to meet the requirements of flexible wearable electronic devices requirements, less self-supporting properties, and the effect of good flexible wearable electronic devices

Active Publication Date: 2021-09-21
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above scheme is mainly for the preparation of amorphous Ga 2 o 3 Thin film; single crystal Fe cannot be obtained according to the above scheme 3 o 4 Thin film, unable to satisfy Fe 3 o 4 Magnetic Requirements for Thin Films

Method used

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  • Flexible self-supporting single crystal magnetic fe <sub>3</sub> o <sub>4</sub> Preparation of thin film materials, thin film materials and applications, single crystal structure
  • Flexible self-supporting single crystal magnetic fe <sub>3</sub> o <sub>4</sub> Preparation of thin film materials, thin film materials and applications, single crystal structure
  • Flexible self-supporting single crystal magnetic fe <sub>3</sub> o <sub>4</sub> Preparation of thin film materials, thin film materials and applications, single crystal structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] A flexible self-supporting single crystal magnetic Fe 3 o 4 The preparation method of film material, comprises the following steps:

[0060] (1) Select the STO (001) substrate and preprocess it, including the following steps:

[0061] a. Immerse the STO (001) substrate in acetone and ultrasonically clean it at 60 °C for 10 min;

[0062] b. Then immerse the STO (001) substrate in absolute ethanol, and ultrasonically clean it for 5 minutes;

[0063] c. Next, immerse the STO (001) substrate in deionized water and ultrasonically clean it for 5 minutes;

[0064] d. Finally, dry the STO (001) substrate with nitrogen.

[0065] (2) The single crystal SAO layer and Fe 3 o 4 Thin film material specifically comprises the following steps:

[0066] (a) Paste the STO (001) substrate pretreated in step (1) on the SiC heat conduction sheet with silver paste, and then heat and dry;

[0067] (b) Place the SiC heat conduction sheet pasted with the STO(001) substrate on the laser hea...

Embodiment 2

[0080] A flexible self-supporting single crystal magnetic Fe 3 o 4 The preparation method of film material, comprises the following steps:

[0081] (1) Select the STO (001) substrate and preprocess it, including the following steps:

[0082] a. Immerse the STO (001) substrate in acetone and ultrasonically clean it at 60°C for 10 min;

[0083] b. Then immerse the STO (001) substrate in absolute ethanol, and ultrasonically clean it for 5 minutes;

[0084] c. Next, immerse the STO (001) substrate in deionized water and ultrasonically clean it for 5 minutes;

[0085] d. Finally, dry the STO (001) substrate with nitrogen.

[0086] (2) The single crystal SAO layer and Fe 3 o 4 Thin film material specifically comprises the following steps:

[0087] (a) Paste the STO (001) substrate pretreated in step (1) on the SiC heat conduction sheet with silver paste, and then heat and dry;

[0088] (b) Place the SiC heat conduction sheet pasted with the STO(001) substrate on the laser he...

Embodiment 3

[0097] A flexible self-supporting single crystal magnetic Fe 3 o 4 The preparation method of film material, comprises the following steps:

[0098] (1) Select the STO (001) substrate and preprocess it, including the following steps:

[0099] a. Immerse the STO (001) substrate in acetone and ultrasonically clean it at 60°C for 10 min;

[0100] b. Then immerse the STO (001) substrate in absolute ethanol, and ultrasonically clean it for 5 minutes;

[0101] c. Then immerse the STO (001) substrate in deionized water and ultrasonically clean it for 5 minutes;

[0102] d. Finally, dry the STO (001) substrate with nitrogen.

[0103] (2) The single crystal SAO layer and Fe 3 o 4 Thin film material specifically comprises the following steps:

[0104] (a) Paste the STO (001) substrate pretreated in step (1) on the SiC heat conducting sheet with silver paste, and then heat and dry;

[0105] (b) Place the SiC heat conduction sheet pasted with the STO(001) substrate on the laser hea...

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Abstract

The invention relates to flexible self-supporting single crystal magnetic Fe 3 o 4 Preparation method of thin film material, single crystal magnetic Fe 3 o 4 Thin film and its application, single crystal structure; the preparation method includes the following steps: select the STO substrate whose crystal plane orientation is (001); prepare a single crystal SAO layer on the STO substrate; prepare a single crystal magnetic Fe on the single crystal SAO layer 3 o 4 thin film, forming STO / SAO / Fe 3 o 4 Single crystal structure; the prepared STO / SAO / Fe 3 o 4 The single crystal structure is immersed in water to dissolve the single crystal SAO layer, the STO substrate and the single crystal magnetic Fe 3 o 4 Thin-film separation yields flexible self-supporting single-crystal magnetic Fe 3 o 4 film material. Flexible self-supporting single crystal magnetic Fe 3 o 4 Thin film materials have excellent flexibility, self-supporting properties, and high saturation magnetization at room temperature, and have broad application prospects in the fields of flexible spintronic devices.

Description

technical field [0001] The present invention relates to magnetic Fe 3 o 4 The technical field of thin-film materials, especially related to flexible self-supporting single-crystal magnetic Fe 3 o 4 Preparation method of thin film material, single crystal magnetic Fe 3 o 4 Thin films and their applications, single crystal structures. Background technique [0002] With the development of science and technology, flexible and wearable electronic devices such as electronic skin, smart fabrics, and implanted medical devices have received increasing attention in recent years, and the demand for wearable flexible information storage devices has also increased. At present, most of the common flexible information storage materials are based on organic polymer materials, but these materials have always had problems such as narrow service temperature range, large volume, slow response speed, and high energy consumption when they are applied. not properly resolved. [0003] Magnet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C30B23/06C30B29/16C30B29/22C30B33/10H01L43/10
CPCC30B23/025C30B23/063C30B29/16C30B29/22C30B33/10H10N50/85
Inventor 钟高阔李江宇訾孟飞安峰屈可
Owner SHENZHEN INST OF ADVANCED TECH
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