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Preparation of flexible self-supporting single crystal Fe3O4 thin film material capable of self-regulating growth orientation, thin film material, and single crystal structure

A technology of growth orientation and thin film materials, which is applied in the field of growth orientation of flexible self-supporting crystal structures, can solve the problems of narrow application range of thin films, and achieve the effects of promoting production, expanding applications, and stable product quality

Active Publication Date: 2021-02-26
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] To improve single-orientation flexible self-supporting single crystal Fe 3 o 4 For the narrow application range of thin films, this application provides a flexible self-supporting single crystal Fe with self-regulating growth orientation 3 o 4 Preparation of thin film materials, thin film materials and single crystal structure

Method used

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  • Preparation of flexible self-supporting single crystal Fe3O4 thin film material capable of self-regulating growth orientation, thin film material, and single crystal structure
  • Preparation of flexible self-supporting single crystal Fe3O4 thin film material capable of self-regulating growth orientation, thin film material, and single crystal structure
  • Preparation of flexible self-supporting single crystal Fe3O4 thin film material capable of self-regulating growth orientation, thin film material, and single crystal structure

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Embodiment 1

[0070] A flexible self-supporting single crystal Fe with self-regulated growth orientation 3 o 4 The preparation method of film material, comprises the following steps:

[0071] (1) Select the STO (001) substrate and preprocess it, including the following steps:

[0072] a. Immerse the STO (001) substrate in acetone, and ultrasonically clean it at 60°C for 10 minutes;

[0073] b. Then immerse the STO (001) substrate in absolute ethanol, and ultrasonically clean it for 5 minutes;

[0074] c. Then immerse the STO (001) substrate in deionized water and ultrasonically clean it for 5 minutes;

[0075] d. Finally, dry the STO (001) substrate with nitrogen.

[0076] (2) The single crystal SAO layer, STO layer and Fe 3 o 4 Thin film material specifically comprises the following steps:

[0077] (a) Paste the STO (001) substrate pretreated in step (1) on the SiC heat conduction sheet with silver paste, and then heat and dry;

[0078] (b) Place the SiC heat conduction sheet paste...

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Abstract

The invention discloses preparation of a flexible self-supporting single crystal Fe3O4 thin film material capable of automatically regulating and controlling growth orientation, the thin film material, and a single crystal structure. The preparation method comprises the following steps: selecting an STO substrate of which the crystal face orientation is (001); preparing a single crystal SAO layeron the STO substrate; preparing a regulation and control thin layer on the SAO layer; preparing a single crystal magnetic Fe3O4 film on the regulation and control thin layer to form an STO / SAO / regulation and control thin layer / Fe3O4 single crystal structure; and soaking the STO / SAO / regulation and control thin layer / Fe3O4 single crystal structure in water to dissolve the SAO layer to prepare the flexible self-supporting single crystal Fe3O4 thin film material with one surface coated with the regulation and control thin layer. According to the application, the flexible self-supporting single crystal Fe3O4 thin film material with different growth orientations is obtained through self-regulation according to requirements, so that epitaxial heterojunctions with different lattice parameters canbe grown on the flexible self-supporting single crystal Fe3O4 thin film material, and the application of the single crystal Fe3O4 thin film material in the field of wearable electronic products is greatly expanded.

Description

technical field [0001] This application relates to the field of growth orientation of flexible self-supporting crystal structures, more specifically, it relates to a flexible self-supporting single crystal Fe with self-regulating growth orientation 3 o 4 Preparation of thin film materials, thin film materials and single crystal structure. Background technique [0002] With the development of science and technology, flexible and wearable electronic devices such as electronic skin, smart fabrics, and implanted medical devices have received increasing attention in recent years, and the demand for wearable flexible information storage devices has also increased. At present, most of the common flexible information storage materials are based on organic polymer materials, but these materials have always had problems such as narrow service temperature range, large volume, slow response speed, and high energy consumption when they are applied. not properly resolved. [0003] Magn...

Claims

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Application Information

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IPC IPC(8): C30B29/16C23C14/08C23C14/28C30B23/02C30B29/22C30B29/32C30B29/60
CPCC30B29/16C30B29/60C30B23/025C30B29/32C30B29/22C23C14/28C23C14/08C23C14/088C23C14/085
Inventor 李江宇钟高阔安峰欧云訾孟飞
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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