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Preparation of flexible self-supporting single crystal magnetic Fe3O4 thin film material, thin film material, application and single crystal structure

A thin film material and single crystal structure technology, applied in the direction of material selection, polycrystalline material growth, single crystal growth, etc., can solve problems such as unsatisfactory and impossible to prepare single crystal Fe thin film, achieve less self-supporting characteristics, and benefit The effect of promoting production and easy production

Active Publication Date: 2020-10-02
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above scheme is mainly for the preparation of amorphous Ga 2 o 3 Thin film; single crystal Fe cannot be obtained according to the above scheme 3 o 4 Thin film, unable to satisfy Fe 3 o 4 Magnetic Requirements for Thin Films

Method used

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  • Preparation of flexible self-supporting single crystal magnetic Fe3O4 thin film material, thin film material, application and single crystal structure
  • Preparation of flexible self-supporting single crystal magnetic Fe3O4 thin film material, thin film material, application and single crystal structure
  • Preparation of flexible self-supporting single crystal magnetic Fe3O4 thin film material, thin film material, application and single crystal structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] A flexible self-supporting single crystal magnetic Fe 3 o 4 The preparation method of film material, comprises the following steps:

[0060] (1) Select the STO (001) substrate and preprocess it, including the following steps:

[0061] a. Immerse the STO (001) substrate in acetone and ultrasonically clean it at 60 °C for 10 min;

[0062] b. Then immerse the STO (001) substrate in absolute ethanol, and ultrasonically clean it for 5 minutes;

[0063] c. Next, immerse the STO (001) substrate in deionized water and ultrasonically clean it for 5 minutes;

[0064] d. Finally, dry the STO (001) substrate with nitrogen.

[0065] (2) The single crystal SAO layer and Fe 3 o 4 Thin film material specifically comprises the following steps:

[0066] (a) Paste the STO (001) substrate pretreated in step (1) on the SiC heat conduction sheet with silver paste, and then heat and dry;

[0067] (b) Place the SiC heat conduction sheet pasted with the STO(001) substrate on the laser hea...

Embodiment 2

[0080] A flexible self-supporting single crystal magnetic Fe 3 o 4 The preparation method of film material, comprises the following steps:

[0081] (1) Select the STO (001) substrate and preprocess it, including the following steps:

[0082] a. Immerse the STO (001) substrate in acetone and ultrasonically clean it at 60°C for 10 min;

[0083] b. Then immerse the STO (001) substrate in absolute ethanol, and ultrasonically clean it for 5 minutes;

[0084] c. Next, immerse the STO (001) substrate in deionized water and ultrasonically clean it for 5 minutes;

[0085] d. Finally, dry the STO (001) substrate with nitrogen.

[0086] (2) The single crystal SAO layer and Fe 3 o 4 Thin film material specifically comprises the following steps:

[0087] (a) Paste the STO (001) substrate pretreated in step (1) on the SiC heat conduction sheet with silver paste, and then heat and dry;

[0088] (b) Place the SiC heat conduction sheet pasted with the STO(001) substrate on the laser he...

Embodiment 3

[0097] A flexible self-supporting single crystal magnetic Fe 3 o 4 The preparation method of film material, comprises the following steps:

[0098] (1) Select the STO (001) substrate and preprocess it, including the following steps:

[0099] a. Immerse the STO (001) substrate in acetone and ultrasonically clean it at 60°C for 10 min;

[0100] b. Then immerse the STO (001) substrate in absolute ethanol, and ultrasonically clean it for 5 minutes;

[0101] c. Next, immerse the STO (001) substrate in deionized water and ultrasonically clean it for 5 minutes;

[0102] d. Finally, dry the STO (001) substrate with nitrogen.

[0103] (2) The single crystal SAO layer and Fe 3 o 4 Thin film material specifically comprises the following steps:

[0104] (a) Paste the STO (001) substrate pretreated in step (1) on the SiC heat conduction sheet with silver paste, and then heat and dry;

[0105] (b) Place the SiC heat conduction sheet pasted with the STO(001) substrate on the laser he...

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Abstract

The invention relates to a preparation method of a flexible self-supporting single-crystal magnetic Fe3O4 film material, a single-crystal magnetic Fe3O4 film, application of same, and a single-crystalstructure. The preparation method comprises the following steps: selecting an STO substrate of which the crystal face orientation is (001); preparing a single crystal SAO layer on the STO substrate;preparing a single crystal magnetic Fe3O4 film on the single crystal SAO layer to form an STO / SAO / Fe3O4 single crystal structure; and soaking the prepared STO / SAO / Fe3O4 single crystal structure in water to dissolve the single crystal SAO layer, and separating the STO substrate from the single crystal magnetic Fe3O4 thin film to prepare the flexible self-supporting single crystal magnetic Fe3O4 thin film material. The flexible self-supporting single-crystal magnetic Fe3O4 film material has excellent flexibility and self-supporting characteristics, is high in saturation magnetization at room temperature, and has a wide application prospect in the fields of flexible spin electronic devices and the like.

Description

technical field [0001] The present invention relates to magnetic Fe 3 o 4 The technical field of thin-film materials, especially related to flexible self-supporting single-crystal magnetic Fe 3 o 4 Preparation method of thin film material, single crystal magnetic Fe 3 o 4 Thin films and their applications, single crystal structures. Background technique [0002] With the development of science and technology, flexible and wearable electronic devices such as electronic skin, smart fabrics, and implanted medical devices have received increasing attention in recent years, and the demand for wearable flexible information storage devices has also increased. At present, most of the common flexible information storage materials are based on organic polymer materials, but these materials have always had problems such as narrow service temperature range, large volume, slow response speed, and high energy consumption when they are applied. not properly resolved. [0003] Magnet...

Claims

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Application Information

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IPC IPC(8): C30B23/02C30B23/06C30B29/16C30B29/22C30B33/10H01L43/10
CPCC30B23/025C30B23/063C30B29/16C30B29/22C30B33/10H10N50/85
Inventor 钟高阔李江宇訾孟飞安峰屈可
Owner SHENZHEN INST OF ADVANCED TECH
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