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Organic photoelectric detector bottom electrode and preparation method and application thereof

A photodetector and bottom electrode technology, applied in photovoltaic power generation, electric solid state devices, semiconductor/solid state device manufacturing, etc., can solve problems such as work function mismatch, bottom electric layer oxidation, etc., to improve work function matching and reduce contact Resistance, anti-oxidation effect

Inactive Publication Date: 2020-09-18
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] The object of the present invention is to: aim at the problem that the bottom electrode of the above-mentioned forward assembly structure device is easily oxidized and the work function of the active layer will not match, the present invention provides a positive assembly organic visible-near infrared photodetector Bottom electrode structure and its preparation method and application to solve the problems of bottom electrode oxidation, work function mismatch, etc.

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  • Organic photoelectric detector bottom electrode and preparation method and application thereof

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention is further described in detail. It should be understood that the specific embodiments described here are only used to explain the present invention, and are not intended to limit the present invention, that is, the described embodiments are only some of the embodiments of the present invention, but not all of the embodiments.

[0028] Using existing vacuum evaporation equipment, using high-purity aluminum (≥99.99%) and nickel-chromium alloy (Ni:Cr=80:20wt%) as the growth source of the main layer of the bottom electrode and the function adjustment layer respectively, on a transparent substrate The main body layer is deposited first, and then the function adjustment layer of the nickel-chromium alloy is deposited.

[0029] The preparation method of the main body layer and the function adjustment layer is as follows:

[0030] 1. Pretreatment of transparen...

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Abstract

The invention discloses an organic photoelectric detector bottom electrode and a preparation method and application thereof, which belong to the technical field of semiconductor photoelectric devices.The organic photoelectric detector bottom electrode comprises a substrate; a bottom electrode structure composed of a main body layer and a function adjusting layer is arranged on the substrate; andthe main body layer and the function adjusting layer are respectively prepared through an electron beam evaporation method. A double-layer composite structure metal electrode (Al-NiCr) is adopted, themain body layer has high reflectivity from a visible band to an infrared band, and the absorption efficiency of incident light is improved; the growth function adjusting layer can be matched with thecathode buffer layer, protect the main body layer and prevent the main body layer from being oxidized and eroded by water vapor; and the application of the organic photoelectric detector can be greatly promoted.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a bottom electrode of an organic photodetector and a preparation method and application thereof. Background technique [0002] Photodetector is a very important optoelectronic device, which can be widely used in space thermal detection, space thermal imaging, space communication and other fields. In recent years, it can be seen that photodetectors in the infrared band have developed rapidly, especially organic photodetectors using new organic polymer materials as active layers. Photodetectors usually adopt a sandwich-like structure, which is divided into a bottom electrode, an anode modification layer, an active layer, a cathode modification layer, a transparent electrode, and a substrate, among which the upper and lower electrodes and the active layer are indispensable. For organic photodetectors, indium tin oxide (ITO) is usually used f...

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Application Information

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IPC IPC(8): H01L51/44H01L51/48
CPCH10K71/60H10K30/81Y02E10/549Y02P70/50
Inventor 太惠玲巩国豪蒋亚东肖建花王洋顾德恩刘青霞黎威志
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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