Additive for texturing diamond wire cut monocrystalline silicon wafer, and application thereof
A diamond wire cutting, single-crystal silicon wafer technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of large alkali consumption and long texturing time, and achieve the reduction of alkali consumption and suede. The effect of better regularity and lower production costs
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Embodiment 1
[0038] A texturing method for a diamond wire cut monocrystalline silicon wafer, comprising the following steps: 1) removing the damaged layer of the silicon wafer; 2) texturing; 3) cleaning;
[0039] Wherein, the texturing liquid of step 2) adopts 0.75wt% potassium hydroxide aqueous solution, and the additive is mixed in the texturing liquid; The mass percentage content of each component in the additive is: carboxymethylated chitosan 0.6%, alkyl glycoside 0.05%, sodium polystyrene sulfonate 0.5%, sodium formate 0.5%, sodium acetate 0.5% and the rest of water; the mass ratio of additives to potassium hydroxide aqueous solution is 0.5:100; the texture temperature is 81°C, velvet time 450s.
[0040] The reflectance of the textured sheet obtained in Example 1 was 10.5.
Embodiment 2
[0042] A texturing method for a diamond wire cut monocrystalline silicon wafer, comprising the following steps: 1) removing the damaged layer of the silicon wafer; 2) texturing; 3) cleaning;
[0043] Wherein, step 2) the texturizing solution for texturing adopts 0.5wt% sodium hydroxide aqueous solution, and additives are added in the texturing solution; the mass percentage of each component in the additive is: modified starch 1.2%, alkane 0.1% glycoside, 1.2% sodium polystyrene sulfonate, 0.5% sodium benzoate, 1.5% sodium acetate and the rest of water; the mass ratio of additives to sodium hydroxide aqueous solution is 0.6:100; the texture temperature is 82°C, Texturing time 420s.
[0044] The reflectance of the textured sheet obtained in Example 2 was 10.4.
Embodiment 3
[0046] A texturing method for a diamond wire cut monocrystalline silicon wafer, comprising the following steps: 1) removing the damaged layer of the silicon wafer; 2) texturing; 3) cleaning;
[0047] Among them, step 2) the texturing solution for texturing uses 1.0wt% potassium hydroxide aqueous solution, and additives are added to the texturing solution; the mass percentage of each component in the additive is: polylactic acid 3%, alkyl 0.1% glucoside, 1.8% sodium polystyrene sulfonate, 0.5% sodium benzoate, 2% sodium pyruvate and the rest of water; the mass ratio of additives to aqueous sodium hydroxide solution is 0.8:100; the texture temperature is 82°C, Texturing time 420s.
[0048] The reflectance of the textured sheet obtained in Example 3 was 10.7.
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