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Preparation methods of polycrystalline silicon wafer texturing liquid and black silicon material and application of polycrystalline silicon wafer texturing liquid and black silicon material in accelerating LeTID recovery of PERC battery

A technology for polycrystalline silicon wafers and texturing liquid, which is applied in chemical instruments and methods, sustainable manufacturing/processing, circuits, etc., can solve the problems of complicated steps, high cost, environmental pollution, etc., and achieves streamlined process, low cost, and environmental friendliness. Effect

Active Publication Date: 2020-04-21
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the defects of the wet black silicon texturing process steps in the prior art, which are cumbersome, high cost, and pollute the environment, thereby providing a method for preparing polycrystalline silicon chip texturing liquid and black silicon material and its application in accelerating LeTID recovery of PERC batteries

Method used

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  • Preparation methods of polycrystalline silicon wafer texturing liquid and black silicon material and application of polycrystalline silicon wafer texturing liquid and black silicon material in accelerating LeTID recovery of PERC battery
  • Preparation methods of polycrystalline silicon wafer texturing liquid and black silicon material and application of polycrystalline silicon wafer texturing liquid and black silicon material in accelerating LeTID recovery of PERC battery
  • Preparation methods of polycrystalline silicon wafer texturing liquid and black silicon material and application of polycrystalline silicon wafer texturing liquid and black silicon material in accelerating LeTID recovery of PERC battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] A polysilicon texturing liquid, the preparation method is as follows:

[0058] (1) Take 1 mL of PNVA aqueous solution and dissolve it in 8 mL of water;

[0059] (2) Take 16mL of HF aqueous solution, Mn(NO 3 ) 2 64mL of the aqueous solution, join in the solution that step (1) obtains, mix uniformly, obtain polysilicon texturing liquid (wherein, the molar concentration of HF is 4.24mol / L, Mn(NO 3 ) 2 The molar concentration is 3.1mol / L).

[0060] A kind of black silicon material, preparation method is as follows:

[0061] (1) Place the prepared polysilicon texturing solution in a constant temperature water bath at 25°C;

[0062] (2) Etching the polysilicon wafer in the above-mentioned polysilicon wafer texturing solution for 3 minutes;

[0063] (3) Cleaning the etched polysilicon wafer by RCA standard cleaning method to remove impurities and drying to obtain black silicon material.

[0064] figure 1 It is the scanning electron micrograph of the black silicon mater...

Embodiment 2

[0066] A polysilicon texturing liquid, the preparation method is as follows:

[0067] (1) Take 8 mL of PNVA aqueous solution and dissolve it in 16 mL of water;

[0068] (2) Take 16mL of HF aqueous solution, Mn(NO 3 ) 2 64mL of the aqueous solution of HF, join in the solution that step (1) obtains, mix uniformly, obtain polysilicon texturing liquid (wherein, the molar concentration of HF is 3.63mol / L, Mn(NO 3 ) 2 The molar concentration is 2.6mol / L).

[0069] A kind of black silicon material, preparation method is as follows:

[0070] (1) Place the prepared polysilicon texturing solution in a constant temperature water bath at 15°C;

[0071] (2) Etching the polysilicon wafer in the above-mentioned polysilicon wafer texturing solution for 3 minutes;

[0072] (3) Cleaning the etched polysilicon wafer by RCA standard cleaning method to remove impurities and drying to obtain black silicon material.

[0073] figure 2 It is the scanning electron micrograph of the black silic...

Embodiment 3

[0075] A polysilicon texturing liquid, the preparation method is as follows:

[0076] (1) Take 4 mL of the aqueous solution of PNVA and dissolve it in 8 mL of water;

[0077] (2) Take 16mL of HF aqueous solution, Mn(NO 3 ) 2 64mL of the aqueous solution, join in the solution that step (1) obtains, mix uniformly, obtain polysilicon texturing liquid (wherein, the molar concentration of HF is 4.24mol / L, Mn(NO 3 ) 2 The molar concentration is 3.1mol / L).

[0078] A kind of black silicon material, preparation method is as follows:

[0079] (1) Place the prepared polysilicon texturing solution in a constant temperature water bath at 18°C;

[0080] (2) Etching the polysilicon wafer in the above-mentioned polysilicon wafer texturing solution for 1 min;

[0081] (3) Cleaning the etched polysilicon wafer by RCA standard cleaning method to remove impurities and drying to obtain black silicon material.

[0082] image 3 It is the scanning electron micrograph of the black silicon ma...

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Abstract

The invention provides preparation methods of a polycrystalline silicon wafer texturing liquid and a black silicon material and application of the polycrystalline silicon wafer texturing liquid and the black silicon material in accelerating LeTID recovery of a PERC battery. The polycrystalline silicon wafer texturing liquid is prepared from HF (Hydrogen Fluoride), Mn(NO3)2, poly(N-vinylacetamide)and water. By adopting the polycrystalline silicon wafer texturing liquid, a damaged layer does not need to be removed before texturing, a polycrystalline silicon wafer can be directly immersed into the polycrystalline silicon wafer texturing liquid for etching, rapid texturing is realized in a relatively mild environment, the etched polycrystalline silicon wafer can be used for preparing a solarcell after being cleaned for removal of impurities, the use is convenient, and the texturing time is short. The invention also provides a preparation method and application of the black silicon material. The black silicon material has the characteristic of accelerating LeTID recovery when being used for a polycrystalline silicon PERC battery processing technology, can improve the power generationefficiency of the battery, and is beneficial to the popularization and application of the polycrystalline silicon PERC battery.

Description

technical field [0001] The invention relates to the field of photovoltaic materials, in particular to a method for preparing polycrystalline silicon chip texturing liquid and black silicon material and its application in accelerating the recovery of PERC battery LeTID. Background technique [0002] Solar cells, also known as "solar chips" or "photocells", are devices that directly convert light energy into electrical energy through the photoelectric effect or photochemical effect. At present, crystalline silicon solar cells that work on the photoelectric effect are the mainstream. Polycrystalline silicon solar cells are favored for their abundant production raw materials, low cost, high conversion efficiency, and good stability. Polycrystalline silicon wafer is the core component of photoelectric conversion of polycrystalline silicon solar cells. In order to improve the photoelectric conversion efficiency of polycrystalline silicon wafer, it is usually necessary to form text...

Claims

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Application Information

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IPC IPC(8): C09K13/08H01L31/0236H01L31/20
CPCC09K13/08H01L31/02363H01L31/202Y02P70/50
Inventor 周春兰纪方旭王文静
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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