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Graphene/single atomic layer gas/gaas radio generator and manufacturing method thereof

A single atomic layer, graphene layer technology, applied in circuits, electrical components, circuit devices, etc., can solve problems such as difficult preparation and large-scale integration

Active Publication Date: 2022-04-01
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current research has not involved the graphene structure that collects and converts radio energy into electrical energy. Most of the research only involves the tunneling structure of metal-insulator-metal, but this structure is too difficult to prepare and integrate on a large scale. Inventing a simple The wireless charging device of the structure will provide convenient energy supply for the sensor devices and equipment of the Internet of Things

Method used

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  • Graphene/single atomic layer gas/gaas radio generator and manufacturing method thereof
  • Graphene/single atomic layer gas/gaas radio generator and manufacturing method thereof
  • Graphene/single atomic layer gas/gaas radio generator and manufacturing method thereof

Examples

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Effect test

Embodiment 1

[0024] 1) After making the first electrode (titanium gold) on the back of gallium arsenide, perform the following cleaning operation on the gallium arsenide chip: first use acetone to ultrasonically clean it for 5 minutes, then wash it three times with deionized water, and then use dilute hydrochloric acid solution to remove oxidation. layer, then wash off the dilute hydrochloric acid, and then oxidize the surface of gallium arsenide with hydrogen peroxide solution, repeat the deoxidation and oxidation operation 3-7 times, passivate the gallium arsenide sample with 18% ammonium sulfide solution, and finally use deionized water Cleaning is complete;

[0025] 2) Take a piece of copper-based graphene spin-coated with PMMA, and cut it into a regular shape of 0.5cm×0.5cm. Place the cut copper-based graphene on the upper surface of the copper foil etching solution. Use a glass slide to transfer the etched graphene+PMMA layer to deionized water for cleaning, and transfer and clean f...

Embodiment 2

[0029] 1) After making the first electrode (Ti / Au) on the back of GaAs, the gallium arsenide wafer is cleaned as follows: First, ultrasonically clean with acetone for 5 minutes, then wash with deionized water three times, and then remove with dilute hydrochloric acid solution Oxide layer, then wash off the dilute hydrochloric acid, then oxidize the surface of gallium arsenide with hydrogen peroxide solution, repeat the deoxidation and oxidation operation 3-7 times, passivate the gallium arsenide sample with 12% ammonium sulfide solution for 15 minutes, and finally use Deionized water cleaning is completed;

[0030] 2) Take a piece of copper-based graphene spin-coated with PMMA, and cut it into a regular shape of 0.5cm×0.5cm. Put the cut graphene on the copper foil in the copper foil etching solution (graphene face up). Use a glass slide to transfer the etched graphene+PMMA layer to deionized water for cleaning, and transfer and clean for 3-5 times;

[0031] 3) Transfer the c...

Embodiment 3

[0034] 1) After making the first electrode (Ti / Au) on the back of GaAs, the gallium arsenide wafer is cleaned as follows: First, ultrasonically clean with acetone for 5 minutes, then wash with deionized water three times, and then remove with dilute hydrochloric acid solution Oxide layer, wash off the dilute hydrochloric acid and then oxidize the surface of gallium arsenide with hydrogen peroxide solution, repeat the deoxidation and oxidation operation 3-7 times, passivate the gallium arsenide sample with 18% ammonium sulfide solution for 30 minutes, and finally use deionized Water cleaning is complete;

[0035] 2) Take a piece of copper-based graphene spin-coated with PMMA, and cut it into a regular shape of 0.5cm×0.5cm. Put the cut graphene on the copper foil in the copper foil etching solution (graphene face up). Use a glass slide to transfer the etched graphene+PMMA layer to deionized water for cleaning, and transfer and clean for 3-5 times;

[0036] 3) Transfer the clea...

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Abstract

The invention relates to a radio power generation device, and discloses a graphene / single atomic layer GaS / gallium arsenide wireless generator. A layer of single atomic layer GaS is formed on a gallium arsenide substrate passivated by ammonium sulfide, and then attached A layer of graphene, with a first electrode and a side electrode, direct contact between the graphene and the single atomic layer gallium sulfide surface of gallium arsenide to form a heterojunction; Gallium contacts form a Schottky junction and create a Schottky barrier that collects radio frequency waves (sub-6G) emitted by the source. The quantum nature of the radio frequency waves excites hot electrons in the graphene and tunnels them The process forms an electric current. The invention directly converts external radio frequency waves into DC power, and can provide power to electronic devices such as wearable devices and sensors anytime and anywhere. Compared with traditional wireless charging equipment, the generator is more flexible, has higher efficiency, and has a simpler device structure.

Description

technical field [0001] The invention relates to a radio generator and a preparation method thereof, in particular to a graphene / single atomic layer GaS / gallium arsenide generator and a preparation method thereof, belonging to the field of wireless energy and wireless sensing. Background technique [0002] With the emerging development of artificial intelligence, drones, wearable devices and other fields and the popularity of the Internet of Things, wireless charging devices that can obtain in-situ energy anytime and anywhere have gained widespread attention. The wireless charging method is used to charge the battery, which is beneficial to the long-term operation of the battery and saves a lot of battery maintenance and replacement work. Wireless power transmission technology has the advantages of flexibility, convenience, safety and reliability, non-contact power supply, easy control and less influence from the outside world. Obtaining energy from radio waves has great deve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02J50/20H01L31/115H01L31/0336
CPCH02J50/20H01L31/115H01L31/0336
Inventor 林时胜宣扬帆陈红陈妍郑浩男陆阳华
Owner ZHEJIANG UNIV
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