Ag alloy sputtering target and method for manufacturing ag alloy sputtering target

A manufacturing method and technology of sputtering target, which are applied in sputtering coating, metal material coating process, vacuum evaporation coating and other directions, can solve the problems of generating sulfide and other problems, achieve easy removal, shorten the pre-sputtering time, inhibit the warping effect

Inactive Publication Date: 2020-08-25
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, in the case of an Ag alloy target, sulfide may be generated as a reaction product

Method used

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  • Ag alloy sputtering target and method for manufacturing ag alloy sputtering target
  • Ag alloy sputtering target and method for manufacturing ag alloy sputtering target
  • Ag alloy sputtering target and method for manufacturing ag alloy sputtering target

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Experimental program
Comparison scheme
Effect test

Embodiment

[0102] Hereinafter, the result of the evaluation test which evaluated the Ag alloy sputtering target of this invention mentioned above is demonstrated.

[0103] First, as melting raw materials, Ag raw materials with a purity of 99.99% by mass or higher, In raw materials with a purity of 99.9% by mass or higher, Sn raw materials, and Ge raw materials were prepared. These melted raw materials were weighed so as to have the compounding compositions shown in Table 1.

[0104] Next, through a high-frequency induction heating furnace with a graphite crucible, Ag is smelted under an inert gas atmosphere after vacuum exhaust, and In, Sn, and Ge are appropriately added to the obtained Ag melt. Melting was carried out in an atmosphere.

[0105] After the Ag alloy molten metal was sufficiently stirred by the stirring effect by induction heating, a cast iron mold was cast. The shrinkage cavity portion of the obtained ingot was excised, and the surface of the ingot was ground to obtain a...

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Abstract

The present invention is characterized in having a composition that consists of In and/or Sn in a range of 0.1 mass% to 1.5 mass% total and the balance Ag and unavoidable impurities and in that the arithmetic average surface roughness Ra of the sputtering surface of the target is not more than 7 mum after performing sputtering under conditions, wherein Ar gas pressure is 0.1 Pa, current density is1.5 W/cm2, and integrated power consumption is 0.01 kWh/cm2.

Description

technical field [0001] The present invention relates to an Ag alloy sputtering target used when forming an Ag alloy thin film containing at least one of In and Sn, and the remainder being composed of Ag and unavoidable impurities, and the Ag alloy sputtering target Manufacturing method. [0002] This application claims priority based on patent application No. 2018-028143 filed in Japan on February 20, 2018 and patent application No. 2019-025935 filed in Japan on February 15, 2019, and the contents thereof are incorporated herein. Background technique [0003] Generally, an Ag film with low resistivity is used for reflective electrode films such as displays and LEDs, wiring films such as touch panels, transparent conductive films, and the like. For example, Patent Document 1 discloses using an Ag film or an Ag alloy film that reflects light with high efficiency as a constituent material of an electrode of a semiconductor light emitting element. Furthermore, Patent Document ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C5/06C22F1/14C22F1/00
CPCC22C5/06C22F1/14C23C14/3414
Inventor 林雄二郎小见山昌三
Owner MITSUBISHI MATERIALS CORP
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