Polishing particle and method for manufacturing same, and polishing agent

Abstract

The present invention relates to a polishing particle and a method for manufacturing the same. The polishing particle comprises: a core, which is an elastic core having a spherical structure and elastically deforms under pressure; and a first core shell, which wraps the core, is a grinding layer and is used for grinding a target material, wherein the first core shell has a mesoporous structure. The grinding particle provided by invention is of a microsphere structure composed of the porous carbon core and the cerium oxide first core shell, and the porous carbon core can be elastically deformedunder pressure, so the risk of scratching the surface of a semiconductor due to irregular surface of the polishing particle can be reduced; and in addition, the first core shell is of the mesoporousstructure, so the toughness of the polishing particle can be improved, and the breakage rate of the polishing particle in use can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor chemical mechanical polishing, in particular to a semiconductor abrasive particle capable of reducing the risk of scratching the surface of a target material, a manufacturing method thereof, and an abrasive. Background technique [0002] With the improvement of chip integration, the line width in the chip is continuously reduced, and the requirements for the planarization quality of the semiconductor silicon wafer surface are getting higher and higher. In order to make the surface of the semiconductor silicon wafer more flat, chemical mechanical polishing (Chemical Mechanical Polish, CMP) and other polishing methods are widely used in the manufacture of semiconductor chips. In the chemical mechanical polishing method, the contour of the chip surface is completely flattened by using chemical reaction and mechanical polishing. This technology is used in aluminum alloy, copper, tungsten, silic...

AI Technical Summary

Problems solved by technology

However, broken mesoporous monodisperse microspheres will produce fragments, and the broken mesoporous monodisperse microspheres will still scratch the semiconductor surface

[0004] Doping cerium oxide particles in the abrasive can greatly improve the grinding effect, but there are still the following problems. The specific gravity of cerium oxide abrasive particles is relatively large, and it is easy to precipitate. If excessive additives are added, coagulation and sedimentation will be promoted, which will increase the grinding scratches. At the same time, the shape of cerium oxide abrasive particles is irregular, and the sphericity is not as good as that of silicon oxide. The edges and corners of the surface are easy to cause defects on the chip surface during the grinding process, which is also an important reason for grinding scratches.

This shortcoming will become more pronounced as chip manufacturing moves to smaller sizes

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