Immersion type crystalline silicon cutting and cooling and lubricating method for diamond wire

Abstract

The invention relates to an immersion type crystalline silicon cutting and cooling and lubricating method for diamond wire, and belongs to the field of crystalline silicon machining. The immersion type crystalline silicon cutting and cooling and lubricating method for the diamond wire is characterized in that a diamond wire is immersed in a cutting fluid to cut crystalline silicon, and the cuttingfluid enters a cutting area to cool and lubricate the cutting area; an immersion groove is fully immersed in the cutting fluid, the diamond wire penetrates through the immersion groove and is immersed in the cutting fluid to cut the crystalline silicon, the cutting liquid is brought into the cutting area, and chips brought out of the cutting area are discharged by a flow leakage opening below theimmersion groove; and the immersion groove is formed below a diamond wire net, the immersion groove comprises side walls and a groove bottom connected with the side walls, a space for containing thecutting fluid is defined by the side walls and the groove bottom, a wire groove allowing the diamond wire to penetrate is formed in the upper portion of the side wall corresponding to the diamond wire. The surface roughness quality of the crystalline silicon cut by using the method is better, the surface roughness is better especially under high productivity such as high feeding rate, the qualityof a crystalline silicon product is remarkably improved, the cost is low, the concept is ingenious, and the application prospect is wide.

Description

technical field [0001] The invention belongs to the field of crystal silicon processing, and in particular relates to a submerged diamond wire cutting crystal silicon and a cooling and lubricating method. Background technique [0002] Crystalline silicon is an important part of solar panels to achieve photoelectric conversion, and it needs to be processed through multiple processes to become a standard crystalline silicon wafer. During the processing of crystalline silicon, processing efficiency and cutting quality are the main concerns in the field of single / multi-wire diamond wire sawing. In the traditional processing process, spraying is used as the main cooling method. The traditional nozzle spraying and pouring methods can reduce the temperature of the cutting area to a certain extent and wash away the chips. It can be as low as 50μm, and the single line cut-off can also reach below 120μm. Therefore, the kerf is extremely small, and the ability of the cutting fluid to...

AI Technical Summary

Problems solved by technology

Therefore, the kerf is extremely small, and the ability of the cutting fluid to be brought into the cutting area in the thin line is relatively limited, and sufficient cooling and lubrication effects cannot be guaranteed. limit

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