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Preparation method of directional high-thermal-conductivity diamond/metal-based composite material

A composite material and high thermal conductivity technology, which is applied in metal material coating process, metal processing equipment, coating, etc., can solve problems such as high temperature heating, achieve control, achieve high thermal conductivity, avoid thermal damage and graphitization effect of propensity

Active Publication Date: 2020-07-17
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the problems of high-temperature heating and high-pressure pressurization in the preparation of diamond / metal matrix composites by the traditional process, the present invention provides a simple, reliable and low-heat-input method for preparing directional high-thermal conductivity diamond / metal matrix composites

Method used

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  • Preparation method of directional high-thermal-conductivity diamond/metal-based composite material
  • Preparation method of directional high-thermal-conductivity diamond/metal-based composite material
  • Preparation method of directional high-thermal-conductivity diamond/metal-based composite material

Examples

Experimental program
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Effect test

Embodiment 1

[0040] In this example, the supersonic laser deposition technology is firstly used to deposit a diamond / Cu high thermal conductivity composite material with a diamond volume fraction of 60% on the substrate, and then deposit pure iron powder. A single-layer deposition material is prepared with pure iron powder as the filling phase, and then a composite material with a certain thickness is prepared by layer-by-layer accumulation. The process parameters of supersonic laser deposition are as follows: the spraying distance is 30mm, the scanning speed is 30mm / s, the carrier gas is nitrogen, the carrier gas preheating temperature is 600°C, the pressure is 4MPa, the laser power is 600W, and the powder feeding volume is 40g / min.

[0041] Such as figure 2 - As shown in (a), the deposition track of diamond / Cu on the substrate is single-channel single-layer linear deposition, and the direction of directional heat conduction is from 21 to 22. At this time, the temperature field of dire...

Embodiment 2

[0043] In this example, the material was deposited in the same manner as in Example 1, except that the diamond / Cu deposition trajectory was different.

[0044] Such as image 3 -As shown in (a), the deposition of diamond / Cu is changed from single-pass single-layer deposition in Example 1 to multi-pass overlapping single-layer deposition, forming a thin surface of diamond / Cu, and when the heat is directed from 31 to 32, Conduction is also performed along the 30 direction. At this time, the temperature field of directional heat transfer can be regarded as two-dimensional, that is, two-dimensional plane heat transfer. Similarly, the heat transfer direction of directional heat conduction can be controlled by changing the deposition material and the deposition track of diamond / Cu during the deposition process of the second layer and the third layer, which is the same as the embodiment in Example 1. Such as image 3 -As shown in (b), the second layer is deposited as pure iron pow...

Embodiment 3

[0046] In this example, supersonic laser deposition technology is used to deposit and prepare diamond / Al high thermal conductivity composite material on the substrate, and stainless steel powder is used as the filling phase. The deposition method is the same as in Example 1, the diamond / Al is deposited first, and then the stainless steel powder is deposited.

[0047] The morphology of the first layer deposited on the substrate is as follows Figure 4 - As shown in (a), after depositing several layers in this way of deposition, and then Figure 4 - Depositing several layers of the single-layer deposition morphology in (b), and then depositing several layers in the deposition mode of the first layer, after removing the matrix material, finally obtaining the spatial three-dimensional pattern of the composite material containing diamond / Al The cross-sectional diagram is as Figure 4 -shown in (c). At this time, the temperature field of directional heat transfer can be regarded ...

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Abstract

The invention provides a preparation method of a directional high-thermal-conductivity diamond / metal-based composite material based on supersonic laser deposition. In the method, metal-based powder isdeposited in a full-solid state and does not need to be subjected to the process of solidification after melting in a traditional preparation technology. Besides, diamond is deposited in a low-heat input mode, so that heat damage and graphitization tendency of the diamond in a high-temperature environment are completely avoided, and physical and chemical properties of original powder particles are maintained to a large degree. The diamond is deposited through severe plastic deformation of the metal-based particles accelerated to the supersonic speed, and a bonding interface is mechanically bonded or bonded in other ways, so that surface metallization does not need to be carried out on the diamond particles, high-pressure pressurization equipment is also not needed, and the maximum heat conduction track in the composite material is a diamond-rich deposition track. In the preparation process, a diamond deposition area can be controlled in real time to control the high heat conduction direction.

Description

technical field [0001] The invention relates to a method for preparing directional high thermal conductivity diamond / metal matrix composite material based on supersonic laser deposition. Background technique [0002] With the rapid development of microelectronics technology, the packaging density of semiconductor integrated circuits is getting higher and higher, and the operating speed is getting faster and faster. However, the high integration and high operating speed cause the heat emitted by the device to increase rapidly, resulting in an increase in the working environment temperature of the circuit board. Microprocessors and power semiconductor devices often fail to work due to excessive temperature during application. On the other hand, thermal cycles during device operation often generate large stresses. If the thermal expansion coefficients of materials do not match, thermal fatigue failure of microelectronic circuits and devices will occur. Existing electronic pack...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/04B22F1/00C23C4/12C23C4/06C22C26/00B22F9/22
CPCB22F9/04C23C4/06C23C4/12C22C26/00B22F9/22B22F2009/043B22F2999/00B22F1/052B22F2201/11
Inventor 姚建华王健君李波
Owner ZHEJIANG UNIV OF TECH
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