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PERL solar cell with double-sided power generation and preparation method of PERL solar cell

A solar cell, double-sided technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of increasing the contact resistance of solar cells, high cost, complicated manufacturing process, etc., to increase the photoelectric conversion efficiency and reduce the width of the local opening. , the effect of simple preparation process

Pending Publication Date: 2020-07-03
NANTONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The back electrode of this method is an all-aluminum back field, which generates electricity on one side, and the photoelectric conversion efficiency is low, and the formed local heavily doped layer is easily damaged by the printed back electrode, thereby increasing the contact resistance of the solar cell.
It can be seen that the manufacturing process of existing PERL solar cells is complicated, the cost is high, and it is difficult to achieve mass production

Method used

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preparation example Construction

[0027] The invention provides a method for preparing a double-sided PERL solar cell, comprising the following steps:

[0028] S1. Wafer pretreatment: put P-type silicon wafer in HF / HNO 3 Washing in the mixed solution to remove the damaged layer and cutting line marks on the surface of the P-type silicon chip, and then taking it out for texturing;

[0029] S2. Silicon wafer backside treatment: the backside of the P-type silicon wafer obtained by the pretreatment in step S1 is placed in a KOH solution for polishing, and then a layer of Al is deposited on the backside of the P-type silicon wafer by PECVD. 2 o 3 layer, then the Al 2 o 3 A passivation film SiNx layer is deposited on the layer, and the Al 2 o 3The thickness of the layer is 10-20nm, and the thickness of the SiNx passivation film is 80-100nm;

[0030] S3. Front side treatment of silicon wafer: using POCl 3 As a phosphorus source, phosphorus is diffused on the front side of the P-type silicon wafer obtained in s...

Embodiment 1

[0040] The invention provides a double-sided PERL solar cell

[0041] A preparation method of a double-sided PERL solar cell comprising the steps of:

[0042] S1. Wafer pretreatment: put P-type silicon wafer in HF / HNO 3 Mixed solution (HF / HNO 3 The mixed solution consists of 40wt% HF solution and 65wt% HNO 3 Solution is configured according to the mass ratio of 1:1) to clean, remove the damaged layer and cutting line marks on the surface of the P-type silicon wafer, and then take it out for texturing;

[0043] S2. Silicon wafer backside treatment: the backside of the P-type silicon wafer obtained by step S1 pretreatment is placed in 40wt% KOH solution for polishing, and then a layer of Al is deposited on the backside of the P-type silicon wafer by PECVD method 2 o 3 layer, then in the Al 2 o 3 A passivation film SiNx layer is deposited on the layer, in which Al 2 o 3 The layer thickness is 15nm, and the passivation film SiNx layer thickness is 90nm;

[0044] S3. Front...

Embodiment 2

[0048] A preparation method of a double-sided PERL solar cell comprising the steps of:

[0049] S1. Wafer pretreatment: put P-type silicon wafer in HF / HNO 3 Mixed solution (HF / HNO 3 The mixed solution consists of 40wt% HF solution and 65wt% HNO 3 Solution is configured according to the mass ratio of 1:1) to clean, remove the damaged layer and cutting line marks on the surface of the P-type silicon wafer, and then take it out for texturing;

[0050] S2. Silicon wafer backside treatment: the backside of the P-type silicon wafer obtained by step S1 pretreatment is placed in 40wt% KOH solution for polishing, and then a layer of Al is deposited on the backside of the P-type silicon wafer by PECVD method 2 o 3 layer, then in the Al 2 o 3 A passivation film SiNx layer is deposited on the layer, in which Al 2 o 3 The layer thickness is 10nm, and the passivation film SiNx layer thickness is 80nm;

[0051] S3. Front side treatment of silicon wafer: using POCl 3 As a phosphorus ...

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Abstract

The invention relates to the field of solar cell preparation. The invention discloses a PERL solar cell with double-sided power generation and a preparation method of PERL solar cell. A P-type siliconwafer is subjected to cleaning, texturing, polishing, back passivation, front deposition of an N + doped layer and a SiNx film, back printing of boron slurry, laser is used for forming a back local opening and a heavily doped layer, through printing, a back grid line and a front grid line are formed, and then sintered to form the cell. The preparation process is relatively simple, the width of the formed local opening is greatly reduced, and the damage of the SiNx film and the damage area of the laser to the silicon wafer are reduced while the contact is ensured. The local heavily doped layerformed by boron doping is relatively thick, so that the local heavily doped layer cannot be damaged when the back electrode is sintered, and good ohmic contact can be formed. The back electrode of the cell is of a grid line structure and can also receive light, so that double-sided power generation is realized, and the photoelectric conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the field of solar cell preparation, in particular to a double-sided PERL solar cell and a preparation method thereof. Background technique [0002] PERL (Passivated Emitter and Rear Locally-diffused) cell is the abbreviation of Passivated Emitter and Rear Locally-diffused solar cell. In 1990, based on the PERC battery structure and process of the University of New South Wales, BBr was used at the contact hole on the back of the battery. 3 Localized diffusion produces PERL cells, which are highly efficient solar cells. PERL cells use selective emitters to reduce emitter recombination and improve the contact resistivity of the front electrode. Local heavy doping is used on the back to reduce local recombination and contact resistivity on the back. It is currently the battery with the most potential to achieve a cell efficiency of 22.5%. Its technical route is based on a selective emitter and a locally heavily doped cell struct...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0224H01L31/0352H01L31/068
CPCH01L31/1804H01L31/0684H01L31/022441H01L31/03529Y02E10/547Y02P70/50
Inventor 刘媛丁丽萍丁中武顾鹏程
Owner NANTONG UNIVERSITY
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