A method for the co-catalytic conversion of methane and ethane into olefins, aromatics and hydrogen
A technology for producing ethane and methane, which is applied in chemical instruments and methods, catalyst activation/preparation, hydrogen/synthesis gas production, etc., and can solve the problems of harsh catalyst preparation conditions, low selectivity, and large catalyst bed pressure drop.
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[0062] 1. Preparation of catalytic reactor (thin layer thickness and active component content need to be indicated)
[0063] The preparation method of the lattice doped catalyst includes chemical vapor deposition (MCVD) coating solid-phase doping technology or solid-liquid phase sol-gel combined with high-temperature melting coating technology. Membrane catalysts are marked as:
Embodiment 1
[0066] Modified Chemical Vapor Deposition (MCVD)
[0067] Use 30mL / min of high-purity oxygen to SiCl 4 Liquid and FeCl under saturated vapor pressure at 350°C using 200mL / min high-purity helium 3 The gas is brought into the high-temperature MCVD device, and the contact surface of the quartz tube (wall thickness 1.5mm) with an outer diameter of 20mm and a length of 100mm is SiCl at 1600°C 4 and FeCl 3 After 10 min of oxide deposition, Fe-doped SiO was obtained 2 The powder material is then melted for 40 minutes at a temperature of 1980°C under a 2bar high-purity helium atmosphere to form a thin layer of dopant with a thickness of 100nm on the contact surface of the reactor, and then naturally cooled to obtain a diameter of 20mm and a length of 100mm of Catalytic quartz reactor, wherein Fe doping amount is 0.05wt.%.
Embodiment 2
[0069] Modified Chemical Vapor Deposition (MCVD)
[0070] Use 30mL / min of high-purity oxygen to SiCl 4 Liquid and FeCl under saturated vapor pressure at 350°C using 650mL / min high-purity helium 3 The gas is brought into the high-temperature MCVD device, and the inner wall of the quartz tube (wall thickness 1.5mm) with an outer diameter of 20 mm and a length of 100 mm is heated at 1600 ° C by SiCl 4 and FeCl 3 After 10 min of oxide deposition, Fe-doped SiO was obtained 2 The powder material is then melted for 40 minutes at a temperature of 1980°C under a 2bar high-purity helium atmosphere to form a thin layer of dopant with a thickness of 100nm on the contact surface of the reactor, and then naturally cooled to obtain a diameter of 20mm and a length of 100mm of Catalytic quartz reactor, wherein Fe doping amount is 0.1wt.%.
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