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Diamond-silicon carbide composite material, preparation method thereof and electronic equipment

A composite material and diamond technology, which is applied in the field of diamond-silicon carbide composite materials and its preparation, can solve the problems of large-scale substrate material difficulties, complex shape preparation, and low thermal conductivity of materials, so as to avoid local temperature rise and process Simple, high thermal conductivity effect

Inactive Publication Date: 2020-06-23
北京科技大学广州新材料研究院
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  • Claims
  • Application Information

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Problems solved by technology

The preparation of traditional diamond-silicon carbide composite materials mostly adopts methods such as hot isostatic pressing and high temperature and high pressure sintering. The above methods are not only complicated in equipment, high in production cost, but also difficult to prepare materials with complex shapes and high density, resulting in thermal conductivity of materials Low efficiency and poor dielectric properties; at the same time, due to the limitation of abrasive tools, it is still difficult to prepare large-size substrate materials suitable for circuit heat dissipation

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  • Diamond-silicon carbide composite material, preparation method thereof and electronic equipment
  • Diamond-silicon carbide composite material, preparation method thereof and electronic equipment

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preparation example Construction

[0024] The preparation method of the diamond-silicon carbide composite material of one embodiment, comprises the following steps:

[0025] S110: mixing diamond, polycarbosilane and a plasticizer to prepare casting slurry;

[0026] Wherein, the diamond, dispersant, polycarbosilane, plasticizer and solvent are mixed in a weight ratio of 40-60:1-5:5-10:5-10:30-35. The content of each component within this range can facilitate subsequent tape casting to prepare an ultra-thin green body.

[0027] In one embodiment, the step of adding silicon powder is also included when preparing the casting slurry, and the weight ratio of silicon powder to polycarbosilane is 0.01˜0.1:1. Preferably, the weight ratio of silicon powder to polycarbosilane is 0.01˜0.05:1.

[0028] In one embodiment, the average particle size of the diamond is 30 μm˜150 μm, and the average particle size of the silicon powder is 5 μm˜15 μm. Diamond and silicon powder are controlled within a suitable particle size rang...

Embodiment 1

[0051] In this embodiment, the weight ratio of diamond, dispersant, binder, plasticizer and solvent is 50:3:6:6:35. Wherein, the dispersant is triethyl phosphate, the solvent is the azeotropic liquid of ethanol and ethyl acetate, the binder is polycarbosilane, and the plasticizer is dioctyl phthalate.

[0052] The preparation method of the diamond-silicon carbide composite material of the present embodiment comprises the following steps:

[0053] 1) Mix the diamond, dispersant, and solvent according to the above ratio, and perform ball milling for 6 hours, then add polycarbosilane and plasticizer, and continue ball milling for 12 hours to obtain casting slurry; wherein, the average particle size of diamond is 30 μm.

[0054] 2) Vacuum defoaming the cast slurry for 30 minutes under the condition of vacuum degree of -87.5KPa, and then tape-cast the defoamed slurry. The thickness of the green body after tape-casting is 0.4mm; set the height of the scraper to 1.5mm, demould after...

Embodiment 2

[0057] In this embodiment, the weight ratio of diamond, dispersant, binder, plasticizer and solvent is 50:3:6:6:35. Wherein, the dispersant is triethyl phosphate, the solvent is the azeotropic liquid of ethanol and ethyl acetate, the binder is polycarbosilane, and the plasticizer is dioctyl phthalate.

[0058] The preparation method of the diamond-silicon carbide composite material of the present embodiment comprises the following steps:

[0059] 1) Mix the diamond, dispersant, and solvent according to the above ratio, and perform ball milling for 6 hours, then add polycarbosilane and plasticizer, and continue ball milling for 12 hours to obtain casting slurry; wherein, the average particle size of diamond is 150 μm.

[0060] 2) Vacuum defoaming the cast slurry after ball milling for 30 minutes under the condition of vacuum degree of -87.5KPa; then tape-cast the defoamed slurry, and the thickness of the green body after tape-casting is 0.3mm; set The height of the scraper is ...

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Abstract

The invention relates to a diamond-silicon carbide composite material, a preparation method thereof and electronic equipment, and the preparation method comprises the following steps: mixing diamond,a dispersing agent, polycarbosilane, a plasticizer and a solvent to prepare tape casting slurry; carrying out tape casting treatment on the tape casting slurry to prepare a green body; carrying out hot pressed sintering treatment on the green body; the diamond-silicon carbide composite material prepared by the method has the advantages of high density, high thermal conductivity, simple process, short production period, high automation degree and suitability for large-scale industrial production.

Description

technical field [0001] The invention relates to the technical field of ceramic materials, in particular to a diamond-silicon carbide composite material, a preparation method thereof, and electronic equipment. Background technique [0002] Due to its excellent properties such as high thermal conductivity, high hardness and low thermal expansion coefficient, diamond-silicon carbide composite materials can be used as third-generation electronic packaging materials with excellent comprehensive performance and high-performance wear-resistant materials. The preparation of traditional diamond-silicon carbide composite materials mostly adopts methods such as hot isostatic pressing and high temperature and high pressure sintering. The above methods are not only complicated in equipment, high in production cost, but also difficult to prepare materials with complex shapes and high density, resulting in thermal conductivity of materials Low efficiency and poor dielectric properties; at ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/52C04B35/622C04B35/645C04B35/632C04B35/634
CPCC04B35/52C04B35/622C04B35/632C04B35/634C04B35/63448C04B35/645C04B2235/3826C04B2235/5436C04B2235/77
Inventor 何新波刘鹏飞沈学为王旭磊吴茂
Owner 北京科技大学广州新材料研究院
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