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A kind of substrate hybrid film multilayer wiring manufacturing method

A multi-layer wiring and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc., can solve the problem of inability to increase the number of film wiring layers, difficulty in assembling soft substrates, and poor interconnection reliability To achieve the effect of electromagnetic shielding performance, reduce signal transmission loss, and reduce device junction temperature

Active Publication Date: 2022-07-05
SHANGHAI SPACEFLIGHT ELECTRONICS & COMM EQUIP RES INST
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  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a substrate mixed thin film multilayer wiring manufacturing method to overcome problems such as the inability to increase the number of thin film wiring layers, poor interconnection reliability caused by BCB stress accumulation, and difficulty in assembling soft substrates.

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  • A kind of substrate hybrid film multilayer wiring manufacturing method
  • A kind of substrate hybrid film multilayer wiring manufacturing method
  • A kind of substrate hybrid film multilayer wiring manufacturing method

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Embodiment Construction

[0039] A method for fabricating a substrate hybrid thin-film multilayer wiring proposed by the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become apparent from the following description and claims.

[0040] see figure 1 , in one embodiment, a method for fabricating a substrate hybrid thin-film multilayer wiring, comprising the following steps:

[0041] a1: Provide a substrate after surface polishing and cleaning, and place it in a nitrogen atmosphere for heat treatment;

[0042] a2: Thin film deposition of a tantalum and aluminum composite film on the upper surface of the substrate, and photolithography to produce a selective anodic oxidation lithography pattern on the tantalum and aluminum composite film;

[0043] a3: The substrate is placed in an anodizing electrolyte for selective anodization, the anodized part forms an insulating...

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Abstract

The invention discloses a method for manufacturing a substrate mixed thin-film multilayer wiring. The manufacturing method comprises the following steps: providing a substrate, depositing an aluminum composite film layer on the thin film, performing selective anodic oxidation of aluminum, and forming aluminum wiring insulation in a porous alumina structure layer, the chip heat dissipation structure and the metal aluminum column array are formed in the aluminum film; the thin film deposition aluminum film is performed again, and the aluminum selective anodic oxidation is performed, and repeated in sequence to prepare the Al 2 O 3 / Al thin film multi-layer wiring layer; deposit a copper composite film layer on it, use photolithography to make copper film conduction strips, and make BCB dielectric film through holes; then use thin film deposition and photolithography to make top film conduction strips and soldering disc to prepare a BCB / Cu thin film multilayer wiring layer. Overcome the problems such as the inability to increase the number of thin-film wiring layers, poor interconnect reliability caused by the accumulation of BCB stress, and difficulty in assembling soft substrates, and high-density wiring interconnection on the substrate can meet the miniaturization of high-power chips and large-scale integrated circuits. , High reliability integration requirements.

Description

technical field [0001] The invention belongs to the field of microelectronic encapsulation, and in particular relates to a method for fabricating a substrate hybrid film multilayer wiring. Background technique [0002] The rapid development of modern electronic technology requires electronic systems to develop in the direction of miniaturization, high performance and high reliability. Especially in the aerospace field and civil electronic products, the demand for system integration is more urgent. With the development of VLSI and the increasing complexity of the electrical functions of the integrated objects, system-in-package technology that can integrate multiple functions has become a research hotspot. [0003] System-in-package can integrate active devices such as digital circuits, analog circuits and microwave circuits, as well as various passive devices. The increase of its system complexity leads to a sharp increase in the number of active and passive devices in the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/498H01L23/495H01L23/60H01L21/48
CPCH01L23/49822H01L23/49838H01L23/49866H01L23/49872H01L23/49894H01L23/60H01L23/49568H01L21/4857H01L2224/16225H01L2224/48091H01L2224/73265H01L2924/00014
Inventor 丁蕾陈靖刘凯陈韬马军伟李虎王立春宋晓东
Owner SHANGHAI SPACEFLIGHT ELECTRONICS & COMM EQUIP RES INST
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