Zinc metalloporphyrin copolyimide and application thereof as photoelectric information storage material

A zinc porphyrin copolyimide and porphyrin technology, which is applied to the zinc metalloporphyrin copolyimide and its application field as a photoelectric information storage material, and can solve the problem of poor high and low temperature resistance, difficult operation and the like of the electric storage material. problem, to achieve the effect of facilitating mass production, easy operation and high yield

Active Publication Date: 2020-06-05
HANGZHOU INST OF ADVANCED MATERIAL BEIJING UNIV OF CHEM TECH
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problems of poor high and low temperature resistance and difficult operation of current electrical storage materials, the present invention creatively uses polyimide with excellent high and low temperature resistance and adjustable structure as the intermediate active layer, and the structure of the storage device It is a sandwich structure, which is of great significance for the selection of storage materials and mechanism research

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Zinc metalloporphyrin copolyimide and application thereof as photoelectric information storage material
  • Zinc metalloporphyrin copolyimide and application thereof as photoelectric information storage material
  • Zinc metalloporphyrin copolyimide and application thereof as photoelectric information storage material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Preparation of DATPP

[0045] Put 1g of tetraphenylporphyrin TPP in a single-necked flask, add 20ml of trifluoroacetic acid (TFA) into a 100ml single-necked flask, and dissolve at 25°C for 30min. Then weigh the NaNO 2 0.909g, put into the dissolved TPP to react for 1.5min, then quickly pour the solution into deionized water to terminate the reaction. Then dichloromethane was added for extraction, and the lower organic layer was collected. Slowly add ammonia NH to the organic solution dropwise 3 ·H 2 O until the solution turns purple. After the product was spin-dried, put 0.2g of palladium carbon and 20ml of absolute ethanol into it, and raise the temperature in a nitrogen atmosphere. When the temperature rose to 55°C, hydrazine hydrate was added dropwise at a rate of 10 seconds per drop using a constant pressure dropping funnel, and the temperature rose to 95°C and react for 24h. Suction filtration under reduced pressure while hot, and the obtained filtrate was r...

Embodiment 2

[0048] Preparation of Zn-cis-DATPP

[0049] Dissolve 5,15-bis(4-aminophenyl)-10,20-diphenylporphyrin (DATPP) in chloroform to obtain a 6mg / ml solution, and then slowly add 20mg / ml methanolic solution of zinc acetate dihydrate Add it dropwise to the DATPP solution, stir and react at 25° C. for 3-4 hours under nitrogen atmosphere, and then add a large amount of deionized water to terminate the reaction. After that, chloroform was added for extraction, and the filtrate of the lower layer was obtained by rotary evaporation to obtain a blue-purple solid, and finally the porphyrin diamine containing zinc metal was extracted by column chromatography.

[0050] Infrared (potassium bromide KBr tablet): 3445cm -1 ,3370cm -1 (N-H symmetric and asymmetric stretching vibration), 994cm -1 (N-Zn in the middle of the porphyrin ring), such as image 3 shown.

Embodiment 3

[0052] Preparation of coPI-Zn-DATPP-DSDA50

[0053] Under the protection of nitrogen atmosphere, Zn-cis-DATPP, cis-DATPP and DSDA were added to the three-necked flask according to the molar ratio of 0.5:0.5:1, and m-cresol (solid content was about 10%) was also added to the three-necked flask. As a solvent, the mass volume ratio of Zn-cis-DATPP to m-cresol is 8mg / ml, the temperature of the oil bath is set to 50°C, and the magnetic stirring is turned on and heated for 3-4 hours. Add isoquinoline into the liquid funnel as a catalyst, the mass volume ratio of Zn-cis-DATPP to isoquinoline is 1mg / l, add slowly and set the oil bath temperature to 190°C, and react for 12 hours. Pour the solution in the flask into methanol, a purple-green precipitate occurs, filter, wash with methanol three times, filter, and vacuum dry for 12 hours to obtain coPI-Zn-DATPP-DSDA50 system copolyimide.

[0054] Infrared (potassium bromide KBr tablet): 3313cm -1 (N-H in the middle of the porphyrin ring)...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses zinc metalloporphyrin copolyimide and an application thereof as a photoelectric information storage material, which belong to the field of organic information storage. A preparation method comprises the following steps: firstly, synthesizing zinc metalloporphyrin copolyimide with an electron donor-electron acceptor structure, and forming a nano-film on a treated substrate by using a prepared solution through a spin coating and vacuum evaporation method; the invention aims to solve the problem that the size of the line width and the size of a storage point of the existing storage device are close to the upper limit of application. A spin coating mode is adopted; wherein the size of a molecular functional unit is less than or equal to several nanometers; therefore, the size of a storage point of the equipment is reduced to a nanometer level; a aluminum / coPI / ITO SRAM memory device with a sandwich structure is prepared in a superposition mode; in addition, the porphyrin polyimide device is good in mechanical property, simple in processing technology and excellent in high and low temperature resistance, and has a wide application prospect in the field of information storage.

Description

Technical field: [0001] The invention belongs to the technical field of organic information storage materials, and in particular relates to a zinc metalloporphyrin copolyimide and its application as a photoelectric information storage material. Background technique: [0002] The 21st century is an era dominated by the knowledge economy and the information industry as the core. The explosive growth of information and the continuous miniaturization of electronic devices can continuously and rapidly develop information technology and information materials. Let us It's faster to own a device with this higher storage performance. With the change of the human age, low resolution and high cost continue to challenge the application of traditional silicon-based semiconductor storage materials. Both the line width of the device and the size of the storage point are close to the upper limit of semiconductor materials. Therefore, the key for people to solve the problem is to develop ne...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/10H01L27/28
CPCC08G73/1085C08G73/1064C08G73/1042H10K19/00Y02E10/549
Inventor 齐胜利张焱坤郭家聪田国峰武德珍
Owner HANGZHOU INST OF ADVANCED MATERIAL BEIJING UNIV OF CHEM TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap