Semiconductor electric storage material and flexible electric storage device prepared therefrom and preparation method thereof

A technology of electric storage and semiconductor, applied in the direction of electrical components, etc., can solve the problems of poor high temperature stability, poor repeatability, and low yield, and achieve the effects of good flexibility, easy operation, and simple preparation

Active Publication Date: 2022-06-21
SUZHOU UNIV
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  • Description
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  • Application Information

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Problems solved by technology

[0004] In view of the problems of current electrical storage materials such as poor environment and high temperature stability, low yield, and poor repeatability, the present invention creatively uses Spiro-OMeTAD materials to prepare semiconductor electrical storage materials, and successfully prepares semiconductor electrical storage devices with a sandwich structure, realizing High yield, good flexibility of semiconductor electrical storage behavior, good device environment and high temperature stability, are of great significance in the research trend and practical value of semiconductor electrical storage technology

Method used

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  • Semiconductor electric storage material and flexible electric storage device prepared therefrom and preparation method thereof
  • Semiconductor electric storage material and flexible electric storage device prepared therefrom and preparation method thereof
  • Semiconductor electric storage material and flexible electric storage device prepared therefrom and preparation method thereof

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Embodiment 1

[0034] Example 1: Preparation of semiconductor electrical storage device based on semiconductor material (Spiro-OMeTAD)

[0035] The specific preparation process is as follows:

[0036] 1. Wash the ITO glass with washing powder, and ultrasonicate the ultrapure water, acetone, and ethanol for 10 minutes respectively (using OPA to treat ITO for surface modification: place the ultrasonicated ITO in a tetrahydrofuran solution of 1 mmol / L OPA for 48 hours) Rinse with hydrogen peroxide, soak in ethanol, seal for later use;

[0037] 2. Dissolve Spiro-OMeTAD in tetrahydrofuran or chlorobenzene;

[0038] 3. Dry the ITO glass and spin the prepared solution on the conductive surface at a certain speed;

[0039] 4. The spin-coated ITO glass was stored in a cell culture plate and annealed at 80° for 12 hours to obtain a semiconductor electrical storage material;

[0040]5. For aluminum plating, polish the aluminum wire (remove the surface alumina), cut it into small rods, ultrasonicate ...

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Abstract

The invention discloses a semiconductor electric storage material and a preparation method thereof, and a flexible electric storage device prepared therefrom and a preparation method thereof; aiming at problems such as poor environmental and high-temperature stability, poor repeatability, and easy damage during transportation and utilization of current electric storage materials, Spiro‑OMeTAD was prepared as a resistive random access memory (RRAM) with aluminum / Spiro‑OMeTAD / ITO glass sandwich structure by spin coating, which successfully achieved high-performance electrical storage behavior. The preparation process is simple, and the device environment and Good high temperature stability, good repeatability, and good flexibility are of great significance for the research of electrical storage technology to expand the source of materials and increase its practical value.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and prepares a high-yield and flexible electrical storage device by spin coating, in particular to a semiconductor electrical storage material and a preparation method thereof, and a flexible electrical storage device prepared therefrom and a preparation method, and is a kind of electrical storage device based on Electrical storage material technology of Spiro-OMeTAD. Background technique [0002] Since the 1960s, it has entered the era of the fifth information technology revolution. With the rapid growth of consumer electronic products and the continuous improvement of computer processor and graphics card performance, memory has now become the biggest bottleneck in overall computer performance. The continuous expansion of people's demand for storage stimulates the continuous development of random access memory, and my country, as a global electronic product manufacturing base, ha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/021H10N70/041
Inventor 路建美贺竞辉
Owner SUZHOU UNIV
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