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Semiconductor device and manufacturing method thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc.

Active Publication Date: 2020-05-01
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003]However, while existing high electron mobility transistors generally meet the needs, they are not satisfactory in every respect, and further improvements are still needed to improve performance and have wider application

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

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Embodiment Construction

[0050] Some embodiments are outlined below so that those skilled in the art can more easily understand the present invention. However, these examples are only examples and are not intended to limit the present invention. It can be understood that those skilled in the art can adjust the embodiments described below according to requirements, such as changing the process sequence and / or including more or fewer steps than those described here.

[0051] In addition, other elements may be added to the embodiments described below. For example, the description of "forming a second element on a first element" may include an embodiment in which the first element is in direct contact with the second element, or may include other elements between the first element and the second element, so that the second element Embodiments in which one element is not in direct contact with a second element, and the upper-lower relationship of the first element to the second element may change as the d...

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Abstract

The present invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a channel layer disposed over a substrate, a barrier layer disposed over the channel layer, a compound semiconductor layer disposed over the barrier layer, a pair of source electrodes / drain electrodes which are arranged above the substrate and are respectively positioned ontwo sides of the compound semiconductor layer, a fluorination region arranged in the compound semiconductor layer, and a gate electrode disposed on the compound semiconductor layer. The semiconductordevice is advantaged in that the fluorine is introduced into a compound semiconductor layer of a semiconductor device to form a fluorinated region, so the surface potential is improved, an energy bandis changed, and the threshold voltage and the gate swing are further improved.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor manufacturing technology, in particular to semiconductor devices and manufacturing methods thereof. Background technique [0002] High electron mobility transistor (high electron mobility transistor, HEMT), also known as heterojunction field effect transistor (heterostructure FET, HFET) or modulation-doped field effect transistor (modulation-doped FET, MODFET), is a field effect Transistors (field effect transistors, FETs) are composed of semiconductor materials with different energy gaps. A two dimensional electron gas (2DEG) layer is generated adjacent to the formed interface of different semiconductor materials. Due to the high electron mobility of the two-dimensional electron gas, high electron mobility transistors can have the advantages of high breakdown voltage, high electron mobility, low on-resistance, and low input capacitance, and are therefore suitable for use in high-power devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/207H01L21/335
CPCH01L29/7786H01L29/207H01L29/66462
Inventor 陈志谚
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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