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A processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell

A processing method and technology of monocrystalline silicon wafers, which are applied in the field of solar cells, can solve the problems of low conversion effect, and achieve the effects of increasing the specific surface area per unit of the upper surface, good absorption efficiency, and uniform p-n junction

Active Publication Date: 2021-04-27
BEIJING NORTH HUACHUANG VACUUM TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the prior art, there are a large number of methods for improving the efficiency of solar cells by making texture, but there are still problems such as low conversion effect

Method used

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  • A processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell

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preparation example Construction

[0051] This embodiment relates to a method for preparing a monocrystalline silicon solar cell, and the processing of a monocrystalline silicon wafer includes the following steps:

[0052]1) Alkali polishing, the cut monocrystalline silicon wafer is polished with a sodium hydroxide solution with a concentration of 4wt%, the polishing temperature is controlled at 60°C, and the polishing time is controlled at 160s to remove the damaged layer of the silicon wafer;

[0053] 2) Pure iron sputtering etching. Firstly, the alkali-polished silicon wafer was washed with deionized water and then dried. Then, it was installed on the target frame as a target material. The pure iron powder sample dish with an average particle size of 60 μm was sputtered. The radiation power is 300W, and the sputtering time is 60min; then, the iron-containing silicon wafer is cleaned with a mixed acid with a hydrochloric acid concentration of 15wt% and a nitric acid concentration of 5wt%, and then cleaned with...

Embodiment 2

[0060] This embodiment relates to a method for preparing a monocrystalline silicon solar cell, and the processing of a monocrystalline silicon wafer includes the following steps:

[0061] 1) Alkali polishing, the cut monocrystalline silicon wafer is polished with a sodium hydroxide solution with a concentration of 2wt%, the polishing temperature is controlled at 60°C, and the polishing time is controlled at 150s to remove the damaged layer of the silicon wafer;

[0062] 2) Pure iron sputtering etching. Firstly, the alkali-polished silicon wafer was washed with deionized water and then dried. Then it was installed on the target frame as a target. The pure iron powder sample dish with an average particle size of 50 μm was sputtered The radiation power is 50W, and the sputtering time is 30min; then, the iron-containing silicon wafer is cleaned with a mixed acid with a hydrochloric acid concentration of 12wt% and a nitric acid concentration of 3wt%, and then cleaned with deionized ...

Embodiment 3

[0070] This embodiment relates to a method for preparing a monocrystalline silicon solar cell, comprising the following steps:

[0071] 1) Alkali polishing, the cut monocrystalline silicon wafer is polished with a sodium hydroxide solution with a concentration of 4wt%, the polishing temperature is controlled at 60°C, and the polishing time is controlled at 160s to remove the damaged layer of the silicon wafer;

[0072] 2) Pure iron sputtering etching. Firstly, the alkali-polished silicon wafer was washed with deionized water and then dried. Then, it was installed on the target frame as a target material. The pure iron powder sample dish with an average particle size of 60 μm was sputtered. The radiation power is 300W, and the sputtering time is 60min; then, the iron-containing silicon wafer is cleaned with a mixed acid with a hydrochloric acid concentration of 15wt% and a nitric acid concentration of 5wt%, and then cleaned with deionized water to remove iron and silicon powder....

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Abstract

The invention belongs to the technical field of solar cells, and in particular relates to a processing method of a single crystal silicon chip, a single crystal silicon chip and a solar cell. The processing of the monocrystalline silicon wafer of the present invention comprises the following steps: 1) on a surface of the monocrystalline silicon wafer, carry out texturing for the first time and diffusion preparation for the first time to form a p-n junction; 2) acid cleaning to remove impurities Stable p-n junction and unstable textured structure; 3) Carry out the second texture and the second diffusion on the surface of the single crystal silicon wafer. The thickness of the textured structure formed after the second texturing is less than 10 nanometers, which can realize the transmission of sunlight. The present invention not only increases the specific surface area of ​​the upper surface of the silicon wafer through two times of texturing and two times of diffusion, especially the texture structure after the second texturing can realize the transmission of sunlight, so that the light absorption efficiency is improved, Moreover, the p-n junction obtained after the above treatment is more uniform, and it can be prepared into a solar cell, and the obtained cell has a higher absorption efficiency of sunlight.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a processing method of a single crystal silicon chip, a single crystal silicon chip and a solar cell. Background technique [0002] Solar energy is an inexhaustible renewable clean energy, which can not only reduce the use of traditional fossil energy but also reduce environmental pollution. Solar photovoltaic power generation can solve the problem of difficult electricity use in remote mountainous areas and areas where conventional grid transmission is inconvenient. The common purpose of texture making is to create a pyramid-shaped texture structure, so that the incident light is reflected and refracted multiple times on the surface of the silicon wafer, which increases light absorption and reduces reflectivity. The texturing effect directly affects the battery capacity and the performance of the final battery, because the texture formed in the texturing process...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0236H01L31/068H01L31/18
CPCH01L31/02366H01L31/068H01L31/1804H01L31/186Y02E10/547Y02P70/50
Inventor 胥俊东
Owner BEIJING NORTH HUACHUANG VACUUM TECH CO LTD
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