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Chemical mechanical polishing composition and method for tungsten

A polishing composition and chemical mechanical technology, applied in the field of chemical mechanical polishing compositions, can solve problems affecting the performance of semiconductor integrated circuits, suboptimal quality substrate surfaces, difficulties in successfully polishing semiconductor surfaces, etc.

Active Publication Date: 2020-04-28
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Topographical defects that may result from such dishing and erosion may further lead to non-uniform removal of additional material from the substrate surface, such as barrier layer materials disposed under conductive or dielectric materials, and produce Substrate surface of less than ideal quality, which may adversely affect the performance of semiconductor integrated circuits
Additionally, as features on semiconductor surfaces become increasingly miniaturized, it becomes increasingly difficult to successfully polish semiconductor surfaces

Method used

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  • Chemical mechanical polishing composition and method for tungsten
  • Chemical mechanical polishing composition and method for tungsten
  • Chemical mechanical polishing composition and method for tungsten

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0096] slurry preparation

[0097] The chemical mechanical polishing composition for this example was prepared by combining the components in the amounts listed in Table 1, with the balance being DI water, and adjusting the pH of the composition to Table 1 with 45 wt % potassium hydroxide Final pH listed.

[0098] Table 1

[0099]

[0100] 1 KLEBOSOL TM 1598-B25(-) zeta potential abrasive slurry, manufactured by AZ Electronics Materials, available from The Dow Chemical Company.

[0101] Table 2

[0102] Polishing Slurry# Oleamide Ethoxylation Degree(m+n) PS-1 3 PS-2 3 PS-3 3 PS-4 3 PS-5 5 PS-6 5 PS-7 5 PS-8 10 PS-9 15 PS-10 20

example 2

[0104] Corrosion rate inhibition performance of oleamide ethoxylate CMP slurry

[0105] Corrosion testing was performed by dipping a W blanket wafer (1 cm x 4 cm) into a 15 g slurry sample. After 10 min the W wafer was removed from the slurry being tested. The solution was then centrifuged at 9,000 rpm for 20 min to remove slurry particles. The supernatant was analyzed by ICP-OES to determine the amount of tungsten by weight. By W quality (assuming that the etched wafer surface area is 4cm 2 ) into the corrosion rate The results of the corrosion tests are in Table 3.

[0106] table 3

[0107] The results of the corrosion rate test show that chemical mechanical polishing containing oleamide ethoxylates with degrees of ethoxylation (m+n) of 3, 5, 10 and 15 compared to the control not including oleamide ethoxylate The slurry significantly reduces W corrosion on the wafer.

example 3

[0109] slurry preparation

[0110] Table 4

[0111]

[0112] 1 KLEBOSOL TM 1598-B25(-) zeta potential abrasive slurry, manufactured by AZ Electronic Materials, available from The Dow Chemical Company.

[0113] 2 The pH was adjusted with 45 wt% potassium hydroxide.

[0114] table 5

[0115]

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Abstract

A composition and method for chemical mechanical polishing a substrate containing tungsten to at least inhibit corrosion of the tungsten. The composition includes, as initial components: water; an oxidizing agent; selected fatty amine ethoxylate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a biocide. The chemicalmechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrateand corrosion of the tungsten is inhibited.

Description

technical field [0001] The present invention relates to the field of chemical mechanical polishing of tungsten to at least inhibit corrosion of tungsten. More specifically, the present invention relates to compositions and methods for chemical mechanical polishing of tungsten to at least inhibit corrosion of tungsten by providing a substrate comprising tungsten; providing a polishing composition comprising as initial components : water; oxidizing agent; aliphatic amine ethoxylate selected in sufficient amount to at least inhibit corrosion of tungsten; dicarboxylic acid, source of iron ions; colloidal silica abrasive; and optionally, pH adjuster; and any Optionally, a biocide; providing a chemical mechanical polishing pad with a polishing surface; creating dynamic contact at the interface between the polishing pad and the substrate; and combining the polishing at or near the interface between the polishing pad and the substrate The compound is distributed onto the polished sur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F3/06
CPCC23F3/06B24B1/00C09K3/1436H01L21/3212C09G1/02C09K3/1463B24B5/01B24B57/02B24B9/04C09G1/06C09K13/06C09K3/1454H01L21/30625C09G1/00C09G1/04
Inventor J·D·彭何蔺蓁B·P-H·齐
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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