Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Epoxy-type negative thick film photoresist as well as preparation method and use method thereof

A photoresist and epoxy type technology, applied in the field of photoresist, can solve problems such as the disadvantage of raw material cost, and achieve the effects of improving brittle crack defects, expanding the scope of application, improving impact strength and thermal shock resistance.

Active Publication Date: 2020-04-14
江苏汉拓光学材料有限公司
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the products disclosed in the above patents have disadvantages in the coordination of subsequent processes, the consideration of other properties of the photoresist, and the cost of raw materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epoxy-type negative thick film photoresist as well as preparation method and use method thereof
  • Epoxy-type negative thick film photoresist as well as preparation method and use method thereof
  • Epoxy-type negative thick film photoresist as well as preparation method and use method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0040] In a second aspect, the present application provides a method for preparing an epoxy-type negative thick-film photoresist as described above, comprising the following steps: mixing the components by weight percentage, stirring and dissolving, and filtering to obtain the photoresist glue.

[0041] In a specific embodiment, the filtration adopts a polypropylene microporous filter membrane with a pore size of 5 μm.

[0042]In a third aspect, the present application provides a method for using the epoxy-type negative thick-film photoresist as described above, comprising the following steps: spin-coating the photoresist on a silicon wafer, followed by pre-baking, exposure, and post-baking Baking, developing. Since the molecular structure of the added polypropylene / ethylene glycol diglycidyl ether has flexible fatty long chains, it can rotate freely and be elastic, thereby ensuring the improvement of the cracking performance of the film.

[0043] In a specific embodiment, t...

Embodiment 1

[0050] A kind of epoxy type negative thick film photoresist, comprises the composition of following weight parts:

[0051]

[0052] The preparation process of the photoresist is as follows: add each component according to the formula, stir to achieve complete dissolution, and complete the preparation of the photoresist after filtering through a 5um pore diameter polypropylene (PP) microporous filter membrane.

[0053] The prepared photoresist is used according to the following method:

[0054] Spin-coat on a 4-inch silicon wafer, then pre-bake at 95°C for 10 minutes, then expose in an LED 365nm exposure machine with an exposure energy of 200mJ, then post-bake at 65°C for 1min, and post-bake at 95°C for 2min , and then develop, wherein, the developing time is 2min, the developing solution adopts PGMEA, and the fixer adopts IPA.

Embodiment 2

[0056] A kind of epoxy type negative thick film photoresist, comprises the composition of following weight parts:

[0057]

[0058] The preparation process of the photoresist is as follows: add each component according to the formula, stir to achieve complete dissolution, and complete the preparation of the photoresist after filtering through a 5um pore diameter polypropylene (PP) microporous filter membrane.

[0059] The prepared photoresist is used according to the following method:

[0060] Spin-coat on a 4-inch silicon wafer, then pre-bake at 95°C for 10 minutes, then expose in an LED 365nm exposure machine with an exposure energy of 200mJ, then post-bake at 65°C for 1min, and post-bake at 95°C for 2min , and then develop, wherein, the developing time is 2min, the developing solution adopts PGMEA, and the fixer adopts IPA.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
thicknessaaaaaaaaaa
softening pointaaaaaaaaaa
Login to View More

Abstract

The invention relates to an epoxy-type negative thick film photoresist, which comprises the following components in percentage by mass: 10-80% of epoxy resin; 3-6% of a photoacid generator; 1-5% of apolymeric glycidyl ether additive; a leveling agent with a concentration being 100 to 3000 ppm; and the balance of a solvent. The invention also relates to a preparation method and a use method of theepoxy-type negative thick film photoresist. According to the invention, the adhesive film cracking defect of the thick film photoresist is significantly improved, and the application range is expanded. The thickness of a photoresist coating film is about 10-200 microns, and the photoresist coating film is suitable for preparing a circuit or a device with a microstructure with a high depth-to-width ratio.

Description

technical field [0001] The invention relates to the technical field of photoresist, in particular to an epoxy-type negative thick-film photoresist and a preparation and use method thereof. Background technique [0002] SU-8 photoresist is a commonly used photoresist for negative epoxy type UV light exposure. Its light absorption in the range of near-ultraviolet light (365nm-400nm) is very low, and the exposure rate obtained by the entire photoresist layer is uniform, and thick film patterns with vertical side walls and high aspect ratio can be obtained; it is also It has good mechanical properties, chemical corrosion resistance and thermal stability; it cross-links after being exposed to ultraviolet radiation, and can form complex structures such as steps; it is non-conductive and can be used directly as an insulator during electroplating. Due to its many advantages, SU-8 glue is being widely used in fields such as MEMS, chip packaging and micromachining. [0003] However,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004C09D163/00C08G59/38
CPCG03F7/004C09D163/00C08G59/38
Inventor 刘平刘永生孙友松冉瑞成毛国平傅志伟
Owner 江苏汉拓光学材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com