Low-noise amplifier, radio frequency front-end circuit, device and equipment

Abstract

The invention discloses a low-noise amplifier, a radio frequency front-end circuit, a device and equipment, and belongs to the technical field of electronics and communication. The low-noise amplifieris composed of a current mirror module composed of a CMOS circuit and a signal amplification module composed of a silicon germanide heterojunction triode circuit. According to the low-noise amplifier, the noise coefficient of the low-noise amplifier is reduced, the occupied area of a chip is saved, the processing and operating cost of the chip and equipment is saved, and the communication efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of electronics and communication, in particular to a low-noise amplifier, a radio frequency front-end circuit, a device and equipment. Background technique [0002] The existing low-noise amplifiers used for BLE are basically CMOS process, such as figure 1 Common 2.4GHz CMOS LNA shown. [0003] Traditional low-noise amplifiers have high random noise (especially at 2.4GHz or higher frequencies) due to the CMOS process, and poor consistency in the manufacturing process. When used as a low-noise amplifier, the noise figure is difficult to achieve low It is less than 1.5 decibels, and as the process technology decreases from 0.18um to 28nm, the channel length is getting lower and lower, resulting in lower gain and lower signal amplification effect. [0004] In order to obtain a relatively large gain, the current must be increased, which increases the size of the device, and the parasitic capacitance effect cau...

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Problems solved by technology

[0003] Traditional low-noise amplifiers have high random noise (especially at 2.4GHz or higher frequencies) due to the CMOS process, and poor consistency in the manufacturing process. When used as a low-noise amplifier, the noise figure is difficult to achieve low It is less than 1.5 decibels, and as the process technology decreases from 0.18um to 28nm, the channel length is getting lower and lower, resulting in lower gain and lower signal amplification effect

[0004] In order to obtain a relatively large gain, the current must be increased, which increases the size of the device, and the parasitic capacitance effect caused by the increase in the size of the device deteriorates the high-frequency characteristics at 2.4GHz.

[0005] Traditional CMOS low noise also has the problem of mismatch. The performance difference between different chips is relatively large due to the process. Although it can be improved through circuit design, it will greatly increase the circuit complexity and deteriorate the noise characteristics.

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