Lithium-aluminum silicon-series glass material allowing photolithography, and preparation method and application thereof

Abstract

The invention relates to lithium-aluminum silicon-series glass material allowing photolithography, and a preparation method and an application thereof. The lithium-aluminum silicon-series glass material includes, by weight, 72-76% of SiO2, 10-15% of Li2O, 3-4% of K2O, 6-8% of Al2O3, 2-3% of Na2O, 1-1.2% of ZnO, 0.8-1.5% of Sb2O3, 0.04-0.08% of Ce2O3, and 0.04-0.08% of Ag2O. The silicon-series glass material has simple and definite material composition and simple production process, and has the equal photosensitiveness as the similar glass products.

Description

technical field [0001] The invention belongs to the field of glass materials, and in particular relates to a photolithographic lithium-aluminum-silicon glass material and a preparation method and application thereof. Background technique [0002] Photolithographic lithium aluminum silicon glass is a functional glass material compatible with microelectronics technology. After ultraviolet lithography and wet etching processes, specific microstructures can be prepared on its surface or inside, and are widely used in communication, aerospace, biomedicine and other fields. [0003] The processability of photolithographic Li-Al-Si glass comes from the trace amount of photosensitizer (Ce 2 o 3 ), nucleating agent (Ag 2 O) and a weak reducing agent (Sb 2 o 3 ). Among them, the photosensitive cerium ions are represented by Ce 3+ and Ce 4+ The form exists in the glass network, while the weak reducing agent Sb 2 o 3 maintain Ce 3+ relative content. Under the irradiation of ...

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Problems solved by technology

[0004] Schott has disclosed a Foturan photolithographic glass with a composition ratio of SiO 2 75~85wt%, Li 2 O 7~11wt%, K 2 O and Al 2 o 3 3~6wt%, Na 2 O 1~2wt%, ZnO2 o 3 0.2~0.4wt%, Ce 2 o 3 0.01~0.04wt%, Ag 2 O 0.05~0.15wt%, the photoetching glass is difficult to meet the application in the field of electronic devices due to its large dielectric constant and large dielectric loss.

The University of Electronic Science and Technology of China has disclosed a photoetching glass whose composition ratio is SiO 2 63~72wt%, Li 2 O 6~12wt%, Na 2 O 1~5wt%, K 2 O 3~9wt%, Al 2 o 3 2~5wt%, ZnO 1~4wt%, Sb 2 o 3 0.5~0.9wt%, Ce 2 o 3 0.02~0.06wt%, Ag 2 O 0.09~0.16wt%, B 2 o 3 2~5wt%, BaO 0.5~2wt% or (and) CaO 0.5~3wt%, MgO 1~5wt%, at 1MHz, the dielectric coefficient is 4.2~5.6, and the dielectric loss is 2~4×10 -3 , the photoetching glass has been improved for the dielectric properties and has been greatly improved, but it is found in the application that due to the Si in the glass 2 The mass percentage of O is greatly reduced, and the proportion of alkali metal oxides is large, resulting in a substantial decrease in glass strength. After microstructural processing of photoetching glass substrates, it is very easy to break, and the Young's modulus is less than 10GPa. Meet the needs of use

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