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High pressure resistant silicone gel for IGBTs and preparation method thereof

A technology of organosilicon and high-voltage resistance, which is applied in the field of high-voltage-resistant organosilicon gel for IGBT and its preparation. The effect of anti-aging properties

Inactive Publication Date: 2020-03-06
ZHUZHOU TIMES NEW MATERIALS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Domestic research on IGBT silicone gels mostly focuses on medium and low voltage modules, because the dielectric strength of these silicone gel products is ≤25KV / mm, which cannot meet the requirements of high voltage modules for dielectric strength

Method used

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  • High pressure resistant silicone gel for IGBTs and preparation method thereof
  • High pressure resistant silicone gel for IGBTs and preparation method thereof
  • High pressure resistant silicone gel for IGBTs and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A high-pressure-resistant silicone gel for IGBTs of the present invention includes component A and component B with a mass ratio of 4:1, wherein component A includes the following raw materials in parts by mass:

[0039] Vinyl-terminated silicone oil (vinyl content 0.1%, viscosity 1000mpa·s at 25°C) 80g,

[0040] γ-(2,3 glycidoxy) propyltrimethoxysilane 10g,

[0041] Catalyst chloroplatinic acid-vinylsiloxane complex 0.01g;

[0042] B component comprises each raw material of following mass parts:

[0043]

[0044] The preparation method of the high-voltage resistant silicone gel for the IGBT of the present embodiment comprises the following steps:

[0045] (1) Preparation of component A:

[0046] Add 80g of vinyl-terminated silicone oil, 10g of γ-(2,3 glycidoxy) propyltrimethoxysilane and ion adsorbent (nano-activated carbon, pore size 0.8nm to 2nm) into the reaction kettle, at 80°C at a low speed Disperse for 4 hours (rotating speed: 500r / min), add 0.01g of cata...

Embodiment 2

[0052] A high-pressure-resistant silicone gel for IGBTs of the present invention includes component A and component B with a mass ratio of 4:1, wherein component A includes the following raw materials in parts by mass:

[0053]

[0054] B component comprises each raw material of following mass parts:

[0055]

[0056] The preparation method of the high-voltage resistant silicone gel for the IGBT of the present embodiment comprises the following steps:

[0057] (1) Preparation of component A:

[0058] 60g terminal vinyl silicone oil (vinyl content 0.1%), 5g gamma-(2,3 glycidoxy) propyltrimethoxysilane, 8g hydroxyl silicone oil and ion adsorbent chitosan are added in the reactor, Disperse at 90°C for 3 hours (rotating speed: 500r / min)), add 0.05g catalyst after filtration, disperse at high speed for 20min (rotating speed: 1200r / min), and vacuum degassing for 20min to obtain component A;

[0059] (2) Preparation of component B:

[0060] 40g terminal vinyl silicone oil (vin...

Embodiment 3

[0064] A high-pressure-resistant silicone gel for IGBTs of the present invention includes component A and component B with a mass ratio of 4:1, wherein component A includes the following raw materials in parts by mass:

[0065]

[0066] B component comprises each raw material of following mass parts:

[0067]

[0068] The preparation method of the high-voltage resistant silicone gel for the IGBT of the present embodiment comprises the following steps:

[0069] (1) Preparation of component A:

[0070] Add 60g vinyl silicone oil (vinyl content 0.1%), 40g vinyl silicone oil (vinyl content 0.2%), 5g gamma-(2,3 glycidoxy) propyltrimethoxysilane and ion adsorbent nano silica gel Put it into the reactor, disperse at 100°C for 2 hours (rotating speed is 500r / min)), filter and then add 0.05g of catalyst, disperse at high speed for 20min (rotating speed is 1200r / min), and vacuum degassing for 20min to obtain component A .

[0071] (2) Preparation of component B:

[0072] 40g v...

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Abstract

The invention discloses high pressure resistant silicone gel for IGBTs. The silicone gel includes multiple components which are an A component and a B component with the mass ratio being (1 : 1)-(6 :1); the A component includes vinyl silicone oil, modified silicone oil and a catalyst; and the B component includes the vinyl silicone oil, a reinforcing material, hydrogen-containing silicone oil anda polymerization inhibitor. A preparation method of the silicone gel is also disclosed. The dielectric strength of the silicone gel is high (the dielectric strength is greater than or equal to 30 KV / mm), so that the technical problems, that silicone gel on the market cannot satisfy the encapsulation requirements of IGBT high-voltage modules, can be solved.

Description

technical field [0001] The invention belongs to the technical field of silicone gel, and in particular relates to a high-voltage resistant silicone gel for IGBT and a preparation method thereof. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Triode) and MOS (Insulated Gate Field Effect Transistor), and has the high input impedance of MOSFET And the advantages of low conduction voltage drop of GTR. The main application fields of IGBT are home appliances (such as frequency conversion appliances and induction cooker), rail transit motors (such as high-speed rail), new energy (such as photovoltaic / wind power), automobiles (such as automobile ignition and EV / HEV), etc. The IGBT module usually includes a copper base plate, a thermally conductive and insulating ceramic copper clad laminate, a chip, a connecting wire, electrodes, control terminals, a plastic ho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L83/07C08L83/05C08L83/04C08L5/08C08K5/5435C08K7/24C08K3/36
CPCC08K2201/011C08L83/04C08L2201/08C08L2203/206C08L2205/025C08L2205/035C08K7/24C08K5/5435C08L5/08C08K3/36
Inventor 朱伟颜渊巍熊昌义高玮胡钊
Owner ZHUZHOU TIMES NEW MATERIALS TECH
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