An embedded double-sided interconnection power module packaging structure and manufacturing method

Abstract

The invention discloses a packaging structure and a manufacturing method of an embedded double-sided interconnection power module, which consists of an IGBT power chip, a diode chip, an upper DBC substrate, a lower DBC substrate, an intermediate adapter plate, a dielectric filling layer, a solder layer, and then Wiring layer, via conductive metal and power terminals. The invention connects the IGBT power chip and the diode chip with the lower DBC substrate through the solder layer. At the same time, a rectangular frame is made on the intermediate transfer board, and the IGBT power chip and the diode chip are embedded in the intermediate transfer board by filling the dielectric material. The upper surface of the chip and the adapter board is covered with a conductive metal layer, the upper and lower surfaces of the intermediate adapter board are interconnected with the upper and lower DBC substrates, and each power terminal is respectively drawn from the conductive copper clad layer of the upper and lower DBC substrates, resulting in an embedded double-sided interconnection connected to the power module. The invention can realize double-sided heat dissipation of the IGBT power module, and improves heat dissipation efficiency. Moreover, no bonding wire is used, which reduces the parasitic inductance of the module.

Description

technical field [0001] The invention relates to the technical field of packaging of power electronic devices, in particular to a packaging structure and a manufacturing method of an embedded double-sided interconnection power module. Background technique [0002] With the continuous development of power electronics technology, power modules have been more and more widely used in aerospace, rail transit, new energy vehicles, wind power generation, photovoltaic power generation and other industries. Currently, the mainstream power module on the market is the IGBT power module. The packaging of the traditional IGBT power module is mainly to weld the collector of the power chip and the anode of the diode chip connected in antiparallel to the copper-clad ceramic substrate (DBC) through lead-free solder, and then use wire bonding to realize the connection between the chip and the anode. Electrical interconnection between chips and between chips and DBC board. The copper substrat...

AI Technical Summary

Problems solved by technology

However, this leads to an increase in the current density of the module, resulting in higher heat generation in the power module under service conditions

However, the traditional power module uses single-sided heat dissipation, and the heat can only be discharged from the collector of the IGBT power chip. This heat dissipation method has poor heat dissipation efficiency.

If the heat is not discharged in time, the junction temperature of the power chip will increase, and the higher junction temperature and junction temperature difference will affect the overall thermomechanical performance and reliability of the power module.

[0004] In addition, the traditional IGBT power module, due to the existence of the wire bonding interconnection structure, causes the module to generate a large parasitic inductance during operation. The existence of the parasitic inductance will cause electromagnetic interference between the chips and reduce the switching speed of the module. And the module has the risk of false switching

Therefore, the application of the module in high frequency conditions is limited

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