Metal ion assisted non-nitric acid polishing method

A metal ion-assisted, nitric acid technology, applied in chemical instruments and methods, photovoltaic power generation, crystal growth, etc., can solve the problems of large consumption, poor stability, low reflectivity, etc., and achieve improved reflection ability, safe and stable components, micro-uniform effect

Inactive Publication Date: 2020-02-21
NANJING NAXIN NEW MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a metal ion-assisted non-nitric acid polishing method, which has the advantages of improving the reflective surface and solves the current problems of low reflectivity, poor stability and large consumption

Method used

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  • Metal ion assisted non-nitric acid polishing method

Examples

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Effect test

Embodiment 1

[0026] see Figure 1-3 , a metal ion-assisted non-nitric acid polishing method, comprising the following steps:

[0027] S1: Prepare polishing solution: dissolve 0.5% citric acid, 3ml / L silver nitrate solution, 2% ammonium bifluoride, and 30% hydrogen peroxide into the remaining amount of deionized water in turn, and mix well. The HF2 in ammonium bifluoride has Faster etching rate, while citric acid has a good metal ion chelation effect, and the hydroxyl group on the α carbon is relatively active under the joint action of the adjacent three carboxyl groups, has strong reducibility and is easily soluble in Water, suitable for acidic environment, the combination of the two is ideal in the polishing process;

[0028] S2: heating and polishing: heating the polishing solution obtained in S1 to 65°C, putting the single crystal textured piece into the polishing solution for polishing, and the polishing time is within 150s;

[0029] S3: Cleaning: cleaning the single crystal textured...

Embodiment 2

[0031] see Figure 1-3 , a metal ion-assisted non-nitric acid polishing method, comprising the following steps:

[0032] S1: Prepare polishing solution: dissolve 0.5% citric acid, 3ml / L silver nitrate solution, 2% ammonium bifluoride, and 30% hydrogen peroxide into the remaining deionized water in turn, and mix well;

[0033] S2: heating and polishing: heating the polishing solution obtained in S1 to 65°C, putting the single crystal textured piece into the polishing solution for polishing, and the polishing time is within 150s;

[0034] S3: Cleaning: cleaning the single crystal textured sheet polished in S2.

Embodiment 3

[0036] see Figure 1-3 , a metal ion-assisted non-nitric acid polishing method, comprising the following steps:

[0037] S1: Prepare polishing solution: dissolve 0.5% glycolic acid, 3ml / L silver nitrate solution, 2% ammonium bifluoride, and 30% hydrogen peroxide into the remaining deionized water in turn, and mix well;

[0038] S2: heating and polishing: heating the polishing solution obtained in S1 to 65°C, putting the single crystal textured piece into the polishing solution for polishing, and the polishing time is within 150s;

[0039] S3: Cleaning: cleaning the single crystal textured sheet polished in S2.

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Abstract

The invention relates to the technical field of monocrystalline silicon solar cells. A metal ion-assisted non-nitric acid polishing method comprises the following steps that S1, a polishing solution is prepared, specifically, 1.5 ml / L-5ml / L of a silver nitrate solution, 0.1%-5% of an organic acid, 0.5%-5% of ammonium bifluoride, 10%-40% of hydrogen peroxide and other components are sequentially dissolved into balance deionized water to be evenly mixed; s2, heating and polishing are conducted, specifically, the polishing solution obtained in the step S1 is heated to 55-70 DEG C, a monocrystalline textured wafer is placed in the polishing solution to be polished, and the polishing time is within 90-360 s; and S3, cleaning is performed, specifically, the monocrystalline textured wafer polished in the S2 is cleaned. The metal ion assisted non-nitric acid polishing method can solve the problems of low reflectivity, poor stability and high consumption at present.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon solar cells, in particular to a metal ion-assisted non-nitric acid polishing method. Background technique [0002] Partial Contact Rear Passivation (PERC) solar cell is a high-efficiency solar cell that is gradually becoming popular in the market. Its core is to cover the back of the silicon wafer with aluminum oxide and silicon nitride to passivate the surface, The purpose of improving the long-wave response is to improve the conversion efficiency of the battery. The uniformity of the reflectivity of the silicon wafer after etching determines the uniformity of the back passivation coating, and also determines the uniformity of the laser opening rate and size, so etching plays a pivotal role in the entire PERC cell production process. effect. [0003] At present, the mainstream uses chain machine hydrofluoric acid / nitric acid mixed acid back polishing process. The steps are as fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06H01L31/18H01L21/306H01L21/311
CPCC30B29/06C30B33/10H01L21/30604H01L21/31111H01L31/1804Y02E10/547Y02P70/50
Inventor 常洪进刘宇琛万鹏侯成成管自生
Owner NANJING NAXIN NEW MATERIAL
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