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LIGBT with carrier storage region

A technology of carrier storage and drift region, applied in LIGBT. It can solve the problem of long turn-off time of LIGBT, and achieve the effect of shortening the turn-off time and life.

Pending Publication Date: 2020-02-18
ADVANCED SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the LIGBT is turned off, because a large number of minority carriers (minority carriers) are stored in its drift region, the LIGBT turns off for a long time.

Method used

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  • LIGBT with carrier storage region
  • LIGBT with carrier storage region

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] This embodiment provides a LIGBT with a carrier storage area, figure 1 A schematic structural diagram of this embodiment is shown. see figure 1 , the LIGBT of this embodiment includes a substrate 1, a buried oxide layer 2, an N-type drift region 3, a P well 4 located at one end of the N-type drift region 3, and an N-type heavily doped layer above the P well 4 from bottom to top. Region 5, the emitter 6 located above the P well 4 and the N-type heavily doped region 5, the gate dielectric layer 7 located above the P well 4, the gate 8 located above the gate dielectric layer 7, and the N-type drift region 3 An N-type buffer zone 9 at one end, a P-type heavily doped region 10 above the N-type buffer region 9 , and a collector 11 above the P-type heavily doped region 10 .

[0026] Wherein, the N-type drift region 3 includes an N-type silicon strip 12 parallel to the channel length direction of the LIGBT, and the N-type silicon strip 12 includes a carrier storage region 13,...

Embodiment 2

[0033] The LIGBT with the carrier storage region provided in this embodiment is a further improvement on Embodiment 1. In this embodiment, the P well 4 of the LIGBT can be formed by, but not limited to, ion implantation, diffusion, evaporation, and sputtering. And it is doped with aluminum ions and / or gallium ions, wherein the concentration and depth of doping of aluminum ions and / or gallium ions can be customized according to actual applications.

[0034] In this embodiment, the P-well 4 can also be doped with boron ions through, but not limited to, ion implantation, diffusion, evaporation, and sputtering.

[0035] In this embodiment, due to the large diffusion coefficient of aluminum and gallium, low diffusion temperature, and fast diffusion speed, the formed PN junction is a graded junction rather than an abrupt junction, so the breakdown voltage is relatively high. The LIGBT of this embodiment Higher reliability.

Embodiment 3

[0037] The LIGBT with carrier storage region provided in this embodiment is a further improvement on Embodiment 1, figure 2 A schematic structural diagram of this embodiment is shown. see figure 2 The improvement of this embodiment compared with Embodiment 1 is that the N-type drift region 3 of the LIGBT in this embodiment also includes a P-type silicon strip 14 parallel to the channel length direction of the LIGBT and spaced from the N-type silicon strip 12, forming A superjunction LIGBT. Wherein, the number of P-type silicon strips 14 can be customized according to actual applications.

[0038] The N-type drift region of the superjunction LIGBT of this embodiment includes N-type silicon strips, and the N-type silicon strips include a carrier storage region doped with hydrogen ions, so that the carrier storage region can be expressed as holes The barrier layer can reduce the saturation voltage drop Vcesat when the super-junction LIGBT is conducting forward, and can also ...

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PUM

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Abstract

The invention discloses a LIGBT with a carrier storage region. The LIGBT comprises an N-type drift region. The N-type drift region comprises an N-type silicon strip. The N-type silicon strip includesthe carrier storage region. The carrier storage region is doped with hydrogen ions. The N-type drift region of the LIGBT comprises the N-type silicon strip, and the N-type silicon strip includes the carrier storage region doped with hydrogen ions so that the carrier storage region can be represented as a hole barrier layer and can reduce the saturation voltage drop Vcesat when the LIGBT is forwardturned on and can also be represented as a composite center and and can shorten the lifetime of minority carriers when the LIGBT is turned off, thus shortening the turn-off time.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a LIGBT with a carrier storage area. Background technique [0002] LIGBT (Lateral Insulated Gate Bipolar Transistor, lateral insulated gate bipolar transistor) combines BJT (Bipolar Junction Transistor, bipolar transistor) and lateral power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal oxide half field-effect transistor ) advantages, as well as the advantages of high input impedance and low conduction voltage drop, are widely used in various power integrated circuit fields. [0003] When the LIGBT is turned on, due to the conductance modulation effect in its drift region, a lower saturation voltage drop can be obtained. However, when the LIGBT is turned off, since a large number of minority carriers (minority carriers) are stored in its drift region, the LIGBT turns off for a long time. Contents of the invention [0004] The technical problem to be s...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/7393H01L29/0619H01L29/0623H01L29/0634
Inventor 王学良刘建华郎金荣闵亚能
Owner ADVANCED SEMICON MFG CO LTD
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