Light emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the semiconductor technology field. Each quantum well layer of a multi-quantum well layer of the light-emitting diode epitaxial wafer comprises a first quantum well sub-layer, a second quantum well sub-layer and a third quantum well sub-layer which are stacked in sequence. In / Ga ratioof the second quantum well sub-layer is greater than or equal to the In / Ga ratios of the first quantum well sub-layer and the third quantum well sub-layer. Si is doped in the first quantum well sub-layer. Each quantum barrier layer comprises a first quantum barrier sub-layer, a second quantum barrier sub-layer and a third quantum barrier sub-layer which are stacked in sequence. The Si / Ga ratio ofthe second quantum barrier sub-layer is greater than or equal to the Si / Ga ratios of the first quantum barrier sub-layer and the third quantum barrier sub-layer. The light emitting diode epitaxial wafer can improve an energy band inclination phenomenon in the multi-quantum well layer, an overlapping degree of wave functions of electrons and holes in space distribution is increased and internal quantum efficiency of an LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] GaN (gallium nitride) is one of the materials for making LED (Light Emitting Diode, light-emitting diode) epitaxial wafers. GaN is an extremely stable compound and a hard high-melting point material. It is also a direct transition wide-bandgap semiconductor material. It not only has good Physical and chemical properties, but also has a high electron saturation rate. Good thermal conductivity, large bandwidth and small dielectric constant and strong anti-radiation ability can be used to prepare high-power devices with good stability, long life, corrosion resistance and high temperature resistance. [0003] Typically, GaN-based LEDs are epitaxially grown on sapphire substrates. The traditional GaN-based LED epitaxial structure generally uses the InGaN / GaN superlattice s...

AI Technical Summary

Problems solved by technology

However, there is a large lattice mismatch between the InGaN layer and the GaN layer, resulting in a large compressive stress between the InGaN layer and the GaN layer

Compressive stress will generate a piezoelectric polarization electric field, which reduces the overlap of electron and hole wave functions, resulting in a tilt of the energy band of the multi-quantum well layer, resulting in a decrease in internal quantum efficiency, thereby affecting LED luminous efficiency.

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