Processing technology for reducing edge crystal holes of zone-melting POLY back-sealed single-side-polished wafer

A processing technology and back-sealing technology, which is applied in the field of processing technology to reduce crystal holes on the edge of single-throw wafers of zone-melted POLY back-sealing, can solve the problem of poor mechanical properties of zone-melt silicon wafers and the inability to solve the problem of 8-inch POLY back-seal single-throw wafer edges Crystal hole phenomenon, easy crystal drop and other problems, to achieve the effect of optimizing the cleaning process, reducing the crystal hole phenomenon, and solving the effect of corrosion

Active Publication Date: 2020-01-21
TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the lamination process reduces the edge crystal hole phenomenon of the Czochralski heavy-doped POLY back-sealed single-throw wafer, it cannot solve the edge crystal hole phenomenon of the 8-inch POLY back-sealed single-throw wafer. The reason is that the oxygen content ratio of the Czochralski wafer Melted silicon wafers are at least an order of magnitude higher, resulting in poorer mechanical properties of zone-fused silicon wafers than Czochralski silicon wafers, and it is easier to drop crystals and produce edge crystal holes after lamination processing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing technology for reducing edge crystal holes of zone-melting POLY back-sealed single-side-polished wafer
  • Processing technology for reducing edge crystal holes of zone-melting POLY back-sealed single-side-polished wafer
  • Processing technology for reducing edge crystal holes of zone-melting POLY back-sealed single-side-polished wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0025] 1. Experimental equipment and raw materials

[0026] 1.1 Experimental equipment

[0027]

[0028] 1.2 Experimental raw materials

[0029]

[0030]

[0031] 2. Experimental plan

[0032]

[0033] 3. Experiment implementation

[0034] 3.1 Experimental process

[0035] serial number Processing technology Processing Equipment Process parameters 1 Corrosion sheet / / 2 POLY back seal LPCVD vertical furnace See 3.2.1 3 Thinning Thinning machine and washing machine See 3.2.2 and 3.2.3 4 polishing Polishing machine and cleaning machine See 3.2.4 and 3.2.5

[0036] 3.2 Process parameters

[0037] 3.2.1 Process parameters of POLY back seal

[0038] LPCVD (Low Pressure Chemical Vapor Deposition) process is adopted, and the specific process parameters are as follows.

[0039]

[0040] 3.2.2 Thinning process parameters

[0041] thickness feed rate C.T RPM Air Cut 15μm — — or...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a processing technology for reducing edge crystal holes of a zone-melting POLY back-sealed single-side-polished wafer. POLY back-sealing, thinning and polishing are carried outon an acid corrosion wafer in sequence, and optimal matching is carried out on a cleaning procedure after thinning. Because the thinning procedure is performed after the POLY back sealing procedure, the phenomenon of crystal holes generated in the POLY back sealing process can be greatly reduced. Compared with the prior art, the processing cost is not increased under the same processing steps, thepercent of pass of finished products is greatly increased, and the processing technology has very high practical application value.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a processing technology for reducing the crystal hole at the edge of a POLY back-sealing single throw sheet in a zone melting. Background technique [0002] As we all know, metal impurities and surface flatness are two important characteristic parameters of device raw material single crystal silicon polished wafers. On the one hand, the surface grinding technology applied to 12-inch polishing pads has greatly improved the surface flatness of the polishing pads. In recent years, this technology has gradually been applied to polished products smaller than 12 inches; The characteristics are widely used to reduce the metal impurities of the polishing sheet. When these two technologies are used to develop 8-inch zone melting and polishing products with high surface flatness requirements and low metal impurity content, due to the poor mechanical properties of zone m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/56H01L21/02
CPCH01L21/56H01L21/304H01L21/02057H01L21/02082Y02P70/50
Inventor 王虎武卫杨梦晨邓碧鑫石明孙晨光
Owner TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap