High-temperature-oxidation-resistant aluminum-chromium-silicon-nitride and alumina multilayer composite coating and preparing method thereof
A technology of high temperature oxidation resistance, aluminum chromium silicon nitrogen, applied in coatings, metal material coating processes, ion implantation plating and other directions, can solve the problems of insufficient wear resistance of coatings, difficult to obtain use effects, low deposition temperature , to achieve the effect of avoiding low hardness, high strength and toughness, and fast deposition rate
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Embodiment 1
[0027] Put the clean cermet substrate into the vacuum chamber of the plasma-enhanced compound ion coating system, and when the vacuum of the back is evacuated to 0.02Pa, turn on the auxiliary heating device on the furnace wall to heat the substrate, and at the same time turn on the rotating power to keep the substrate from Stop rotating and heat until the temperature of the substrate reaches 380°C; then pass argon gas into the vacuum chamber, adjust the flow rate of argon gas to ensure the pressure is 0.1Pa, and then apply a DC bias voltage of -200V and a pulse bias voltage of -400V to the substrate, Using ionized Ar + Etch the surface of the substrate for 60 minutes; turn off the bias voltage of the substrate in turn, adjust the flow of argon to ensure that the working pressure is 0.15Pa, turn on the main arc power supply of the evaporation plating for evaporation coating, the main arc current on the crucible is 180A, and evaporate the raw material for Cr 0.2 Al 0.2 Ti 0.2...
Embodiment 2
[0029] Put the clean cemented carbide substrate into the vacuum chamber of the plasma-enhanced compound ion coating system, and when the vacuum of the back is evacuated to 0.03Pa, turn on the auxiliary heating device on the furnace wall to heat the substrate, and turn on the rotating power supply at the same time to make the substrate Rotate continuously, heat until the substrate temperature reaches 380°C; then pass argon gas into the vacuum chamber, adjust the flow rate of argon gas to ensure the pressure is 0.25Pa, and then apply a DC bias voltage of -200V and a pulse bias voltage of -350V to the substrate , using the ionized Ar + Etch the surface of the substrate for 30 minutes; turn off the bias voltage of the substrate in turn, adjust the flow of argon to ensure that the working pressure is 0.2Pa, turn on the main arc power supply of the evaporation plating for evaporation coating, the main arc current on the crucible is 210A, and evaporate the raw material for Cr 0.2 Al...
Embodiment 3
[0031] Put the clean cermet substrate into the vacuum chamber of the plasma-enhanced compound ion coating system, and when the vacuum of the back is evacuated to 0.03Pa, turn on the auxiliary heating device on the furnace wall to heat the substrate, and turn on the rotating power supply at the same time so that the substrate does not Stop rotating and heat until the temperature of the substrate reaches 380°C; then pass argon gas into the vacuum chamber, adjust the flow rate of argon gas to ensure the pressure is 0.15Pa, and then apply a DC bias voltage of -200V and a pulse bias voltage of -400V to the substrate, Using ionized Ar + Etch the surface of the substrate for 90 minutes; turn off the bias voltage of the substrate in turn, adjust the flow of argon to ensure that the working pressure is 0.1Pa, turn on the main arc power supply of the evaporation plating for evaporation coating, the main arc current on the crucible is 220A, and evaporate the raw material for Cr 0.2 Al ...
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