LDMOS device and forming method thereof

Abstract

The invention relates to an LDMOS device and a forming method thereof. The LDMOS device comprises a substrate, a field oxide layer, a gate structure, a drain region and a source region, wherein the substrate comprises a drift region; the field oxide layer is positioned on the substrate of the drift region; the gate structure comprises a gate electrode covering part of the field oxide layer and thesubstrate and a field plate adjacent to the gate electrode, the extending direction of the gate electrode is a first direction, the direction, perpendicular to the first direction, on the projectionplane of the substrate is a second direction, the field plate comprises a plurality of pseudo gate structures in the first direction and the second direction, and the pseudo gate structures are located on the field oxide layer; the drain region is positioned in the drift region on one side of the field plate; and the source region is positioned in the substrate on one side of the gate electrode. The field plate of the LDMOS device comprises the plurality of pseudo gate structures, and the gaps are reserved between the pseudo gate structures, so that the electric field intensity between the field plate close to one side of the drain end and the drift region can be reduced, and the electrical performance of the LDMOS device is optimized.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an LDMOS device and a forming method thereof. Background technique [0002] Lateral Double-Diffused MOSFET (LDMOS, Lateral Double-Diffused MOSFET) is mainly used in power integrated circuits, such as RF power amplifiers for mobile phone base stations, and can also be used in high frequency (HF), very high frequency (VHF) and ultra-high frequency (UHF) High frequency (UHF) broadcast transmitters and microwave radar and navigation systems, etc. LDMOS technology brings higher power peak-to-average ratio, higher gain and linearity to the new generation of base station amplifiers, and at the same time brings higher data transmission rates to multimedia services. [0003] In the lateral double-diffused field effect transistor (LDMOS), obtaining a uniform electric field at the bottom of the field oxide layer in the drift region is the key to this type of device. The electric field is affe...

AI Technical Summary

Problems solved by technology

[0004]The electrical performance of the existing lateral double diffused field effect transistor (LDMOS) needs to be improved

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