LED epitaxial growth method

A technology of epitaxial growth and growth process, which is applied in the field of LED epitaxial growth, can solve the problems of low radiation recombination efficiency of quantum wells and low quality of quantum well growth, and achieve the effect of improving LED luminous efficiency, improving luminous efficiency, and improving product yield

Active Publication Date: 2019-12-27
XIANGNENG HUALEI OPTOELECTRONICS
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention solves the problems of low quantum well growth quality and low quantum well radiation recombination efficiency existing in the existing LED epitaxial growth method by adopting a new multi-quantum well layer growth method, thereby improving the luminous efficiency of the LED and reducing the number of epitaxial wafers. Warpage, improve product yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED epitaxial growth method
  • LED epitaxial growth method
  • LED epitaxial growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] This embodiment adopts the LED epitaxial growth method provided by the present invention, adopts MOCVD to grow GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0042] An LED epitaxial growth method, which sequentially includes: processing a substrate 1, growing a low-temperature buffer layer GaN2, growing an undoped GaN layer 3, growing a Si-doped N-type GaN layer 4, growing a multi-quantum well layer 5, and g...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an LED epitaxial growth method. The method sequentially comprises steps of processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a multi-quantum well layer, growing an AlGaN electronic blocking layer, growing a Mg-doped P-type GaN layer, performing temperature reduction and cooling, wherein the growth of the multi-quantum well layer sequentially comprises steps of growing a low-temperature GaN barrier layer, growing a pressure gradient InGaN well layer, growing a temperature gradient InGaN well layer, growing a temperature and pressure simultaneous gradient InGaN well layer, growing a high-temperature GaN barrier layer and growing an AlN layer. The method is advantaged in that problems of low quantum well growth quality and low quantum well radiation recombination efficiency in an LED epitaxial growth method in the prior art are solved, so luminous efficiency of an LED is improved, and warping of an epitaxial wafer is reduced.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to an LED epitaxial growth method. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When the LED has current flowing, the electrons and holes in the LED recombine in its multiple quantum wells to emit monochromatic light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED has the advantages of low voltage, low energy consumption, small size, light weight, long life, high reliability and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs. [0003] The quality of LED epitaxial InGaN / GaN multi-quantum wells prepared by the existing LED multi-quantum well growth me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/00H01L33/32C30B25/18C30B29/38
CPCH01L33/0075H01L33/0066H01L33/325C30B25/18C30B29/38
Inventor 徐平胡耀武谢鹏杰
Owner XIANGNENG HUALEI OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap