A kind of semiconductor device and its forming method

Abstract

The present invention provides a semiconductor device and its forming method. The forming method of the semiconductor device comprises the following steps: providing a semiconductor substrate; forming a fluorine-doped silicon glass film layer on the semiconductor substrate; Pretreatment to reduce the precipitation of fluoride ions in the fluorine-doped silicon glass film layer. The present invention pretreats the surface of the fluorine-doped silicate glass film layer, so that the dangling bonds on the surface of the fluorine-doped silicate glass film layer are saturated with oxygen atoms in hydrogen peroxide, thereby passivating the surface of the fluorine-doped silicate glass film layer, and then The speed of fluorine ion precipitation in the fluorine-doped silicon glass film layer is reduced, so that the waiting time between the deposition of FSG, chemical mechanical polishing and the formation of the subsequent covering layer of the fluorine-doped silicon glass film layer does not need to be controlled. The crystal defects that appear improve the reliability of the device, and at the same time, also reduce the process of rework or cleaning, reduce the process time, and improve the process efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method. Background technique [0002] Fluorinated Silicate Glass (FSG: Fluorinated Silicate Glass) is widely used as a material in the back-end technology of integrated circuit manufacturing. It has low dielectric constant, good hole filling performance and stable mechanical constant. It has gradually replaced undoped silicon oxide ( USG) becomes the dielectric layer for interlayer isolation. However, due to the hydrophilicity of FSG, it is easy to absorb water vapor in the air to generate crystal defects, which affects the reliability of the device. [0003] The traditional solution is to control the waiting time between the deposition of FSG, chemical mechanical polishing, and the formation of the subsequent covering layer, thereby reducing the interval time in the preparation process steps. However, if the waiting time exceeds th...

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Problems solved by technology

However, due to the hydrophilicity of FSG, it is easy to absorb water vapor in the air to produce crystal defects, which affects the reliability of the device.

[0003] The traditional solution is to control the waiting time between the deposition of FSG, chemical mechanical polishing, and the formation of the subsequent covering layer, thereby reducing the interval time in the preparation process steps. However, if the waiting time exceeds the time limit, the above defects will still occur. Therefore, it is necessary to increase the cleaning process or rework

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