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A pixel structure organic light emitting diode and its preparation method

A technology of light-emitting diode and pixel structure, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the photon loss, can not solve the problems of OLED device efficiency roll-off, and device external quantum efficiency reduction, etc., to achieve repeated High performance, improving optical light extraction efficiency, and suppressing efficiency roll-off

Active Publication Date: 2021-12-07
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, most high-efficiency devices face two common problems: one is the loss of surface plasmon mode, substrate mode and waveguide mode in the conventional planar multilayer device structure, resulting in only about 20% of the photons generated inside the OLED being able to escape. device, causing a large number of photons to be lost inside the device (about 80%), and the light extraction efficiency is low; second, as the brightness increases, the external quantum efficiency of the device decreases sharply, that is, the efficiency rolls off
However, this patent can only effectively reduce the optical loss of OLEDs, and cannot solve the problem of efficiency roll-off of OLED devices

Method used

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  • A pixel structure organic light emitting diode and its preparation method
  • A pixel structure organic light emitting diode and its preparation method
  • A pixel structure organic light emitting diode and its preparation method

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preparation example Construction

[0031] A method for preparing an organic light-emitting diode with a pixel structure, comprising the following steps:

[0032] S1. Spin-coat negative photoresist on the transparent conductive substrate 1 at 2000-3000 rpm;

[0033] S2. Prepare a pixelated insulating layer 2 of a two-dimensional random nanohole array on a negative photoresist by photolithography and development techniques;

[0034] S3, sequentially spin coating or thermally evaporating the first transport layer 3, the organic light-emitting layer 4 and the second transport layer 5 on the pixelated insulating layer 2;

[0035] S4, on the second transport layer 5 at the evaporation rate The composite back electrode 6 is thermally evaporated to form a pixel structure organic light emitting diode.

Embodiment 1

[0037] like Figure 1-4 as shown, figure 1 and figure 2 They are a structural schematic diagram of a pixel-structured organic light-emitting diode and an explanatory diagram of a manufacturing process flow, respectively, according to the present invention. Combine below Figure 1-4 , describe this embodiment in detail.

[0038] In this embodiment, a green OLED device whose luminescent material is phosphorescence is taken as an example for detailed description. like figure 1 As shown, in this structure, the transparent conductive substrate 1 is glass / ITO, the pixelated insulating layer 2 is negative photoresist (RFJ-210), and the first transmission layer 3 is N,N'-diphenyl-N , N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) and 4,4',4"-Tri(9-carbazoyl)triphenylamine (TCTA) A laminated structure composed of materials, the organic light-emitting layer 4 is bis(2-phenylpyridine) iridium acetylacetonate (Ir(ppy)2(acac)), and the second transport layer 5 is 1,3,5-tri[( 3-py...

Embodiment 2

[0045] Combine below Figure 1-3 and Figure 5 This embodiment will be described in detail.

[0046] In this embodiment, a green OLED device in which the luminescent material is fluorescent is taken as an example for detailed description. like figure 1 As shown, in this structure, the transparent conductive substrate 1 is glass / ITO, the pixelated insulating layer material is negative photoresist (RFJ-220), the first transmission layer 3 is an organic material NPB, the organic light-emitting layer 4 and the second Both transport layers 5 are tris (8-hydroxyquinoline) aluminum (Alq3) composite back electrode 6 is lithium fluoride (LiF) and metal aluminum (Al).

[0047] According to step S1, spin-coat negative photoresist (RFJ-220) on the transparent conductive substrate glass / ITO at 2000 rpm, and then dry it at 120 degrees Celsius.

[0048] According to step S2, after exposing the mask with an argon ion laser, develop in a sodium hydroxide (NaOH) solution with a volume fract...

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Abstract

The invention discloses an organic light-emitting diode with a pixel structure, which belongs to the technical field of organic photoelectric display devices, and comprises a transparent conductive substrate, a pixelated insulating layer, a first transmission layer, an organic light-emitting layer, a second transmission layer and a composite The back electrode, the pixelated insulating layer is a two-dimensional random nanohole array. The invention also discloses a preparation method of the pixel structure organic light emitting diode. The organic light-emitting diode with a pixel structure of the present invention can effectively suppress the roll-off of OLED device efficiency, improve the optical light extraction efficiency of the device at the same time, have the advantages of high repeatability, and be applicable to different light-emitting materials.

Description

technical field [0001] The invention belongs to the technical field of organic photoelectric display devices, and in particular relates to an organic light emitting diode with a pixel structure and a preparation method thereof. Background technique [0002] Organic light-emitting diodes (OLEDs) are widely recognized in the industry due to their unique advantages such as low turn-on voltage, fast response, wide color gamut, self-illumination, wide viewing angle, and can be combined with flexible or wearable substrates. It will be the most potential display and lighting technology of the next generation. [0003] According to the different light-emitting materials of OLED devices, they can be divided into fluorescent OLEDs and phosphorescent OLEDs. Moreover, with the application of phosphorescent materials and delayed fluorescent materials, theoretically the exciton utilization rate of phosphorescent OLEDs and delayed fluorescent OLEDs can reach 100%, which greatly improves t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/00H10K50/852H10K71/00
Inventor 周雷范宝路南峰李忠文范媛媛
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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