Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic light-emitting device based on dual reverse intersystem crossing system

An inverse system, electroluminescence technology, applied in the direction of electric solid state devices, electrical components, semiconductor devices, etc., can solve the problem of difficult to effectively improve the performance of the device

Pending Publication Date: 2022-07-29
JILIN UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the serious exciton quenching phenomenon in the phosphorescent ultra-thin layer structure, it is often difficult to effectively improve the device performance by using a single sensitizer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic light-emitting device based on dual reverse intersystem crossing system
  • Organic light-emitting device based on dual reverse intersystem crossing system
  • Organic light-emitting device based on dual reverse intersystem crossing system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] The preparation of organic electroluminescent devices is prepared in a multi-source organic molecular vapor deposition system. The detailed process is as follows:

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to an organic light-emitting device based on a dual reverse intersystem crossing system. The structure of the device is composed of a substrate, an anode, a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode. The light-emitting layer comprises a non-doped ultrathin layer and an interface main body doped layer; wherein the interface main body doping layer is composed of a donor layer and a sensitization layer, the donor layer is located on one side of the hole transmission layer, and the sensitization layer is located on one side of the electron transmission layer. The non-doped ultrathin layer is located between the donor layer and the hole transport layer. Compared with a traditional organic light-emitting device, the organic light-emitting device has the advantages that the device structure can be simplified, the efficiency roll-off of the device is reduced, and the device efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of organic electroluminescence devices, and in particular relates to an organic electroluminescence device based on a double-reverse intersystem crossing system. Background technique [0002] Lighting and display technology has become an indispensable part of modern society with the development of modern industry. As a new generation of display technology, organic electroluminescent devices (OLEDs) have been widely used in the field of display, such as mobile phones, TVs, wearable devices, etc. OLED is not only used in the display field, but also shows great application value in the lighting field. This is because OLED has the advantages of different other lighting sources: it has the characteristics of self-illumination and surface light source, a wide range of material sources, its own flexibility, and the light source is less harmful to the human eye. At present, phosphorescent materials have become a r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50
CPCH10K50/121H10K50/11
Inventor 陈平杨丽萍
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com