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Composite dielectric structure of gallium nitride electronic device and preparation method

An electronic device and composite dielectric technology, which is applied in the field of GaN electronic device composite dielectric structure and preparation, can solve problems such as defect-enhanced device threshold and instability, achieve in-situ restoration, achieve surface smoothness, and reduce surface residues Effect

Pending Publication Date: 2019-11-22
捷捷半导体有限公司 +1
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Problems solved by technology

[0004] The invention provides a compound dielectric structure and preparation method of a gallium nitride electronic device to solve the current problems of high-density interface states and surface dielectric defect states between the dielectric and Group III nitrides and unstable threshold values ​​of enhanced devices

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  • Composite dielectric structure of gallium nitride electronic device and preparation method
  • Composite dielectric structure of gallium nitride electronic device and preparation method
  • Composite dielectric structure of gallium nitride electronic device and preparation method

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Embodiment Construction

[0028] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0029] The terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting of the present disclosure. The terms "comprising", "comprising", etc. used herein indicate the presence of stated features, ...

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Abstract

A composite dielectric structure of a gallium nitride electronic device comprises a low-interface-state dielectric insertion layer and a high-breakdown electric field dielectric layer, the low-interface-state dielectric insertion layer grows on the surface of the gallium nitride electronic device, and the high-breakdown electric field dielectric layer grows on the low-interface-state dielectric insertion layer. The invention further provides a preparation method of the composite dielectric structure. The method comprises the following steps: placing a gallium nitride electronic device in a machine table, adjusting the temperature of the machine table to a first preset temperature, adjusting the power to first preset power; cleaning the surface of the gallium nitride electronic device by using plasma; and adjusting the temperature of the machine to a second preset temperature and adjusting the power to a second preset power, growing a low-interface-state dielectric insertion layer on the surface of the gallium nitride electronic device, adjusting the temperature of the machine to a third preset temperature and adjusting the power to a third preset power, and growing a high-breakdownelectric field dielectric layer on the low-interface-state dielectric insertion layer. The problem of surface interface defects of the gallium nitride electronic device can be effectively solved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular to a compound dielectric structure and a preparation method of a gallium nitride electronic device. Background technique [0002] Gallium nitride (referred to as GaN) based metal-insulator-semiconductor high electron mobility transistor (referred to as MIS / MOS-HEMT) has excellent characteristics such as high output power density, high frequency and high voltage, high temperature resistance, and radiation resistance. Applications such as devices and microwave devices have great application potential. [0003] However, the surface interface problem of GaN materials is a difficult point that has not been systematically solved from the early stage of research until now. Judging from the current mainstream level of interface state research, SiN X , SiO 2 、Al 2 o 3 The interface state density between iso-dielectric and (Al)GaN is still at 10 12 -10 13 cm -2 o...

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Application Information

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IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/778H01L29/66462
Inventor 刘新宇王成森殷海波黄森王鑫华魏珂黄健张超吴耀辉
Owner 捷捷半导体有限公司
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