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Copper chemical and mechanical polishing combination

A polishing composition and chemical mechanical technology, applied in the direction of polishing composition containing abrasives, can solve problems such as micro-scratches, reduce removal rate, particle residue, etc., achieve low cost, reduce surface residue, and reduce surface corrosion defects Effect

Inactive Publication Date: 2013-08-21
SHENZHEN LEAGUER MATERIAL +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Applying the copper polishing liquid in the previous patents, after simple cleaning after polishing, there will still be a large number of particles remaining on the surface. Although most of the residues will be eliminated by cleaning with cleaning agents, corrosion defects will be formed on the surface at the same time; in addition, copper polishing liquid patents generally Both use benzotriazole as a corrosion inhibitor. Although benzotriazole can form a dense protective film on the copper surface due to strong adsorption to inhibit the formation of corrosion defects, it will also rapidly reduce the removal rate and cause micro scratches due to excessive deposition. damage

Method used

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  • Copper chemical and mechanical polishing combination
  • Copper chemical and mechanical polishing combination
  • Copper chemical and mechanical polishing combination

Examples

Experimental program
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Effect test

Embodiment 1

[0041] Preparation of 700g polishing liquid: take 7g of glycine, add deionized water under stirring, add 0.07g of ammonium dodecylbenzotriazole sulfonate and 1.4g of sodium fluoride and stir until clear, then add 14g of silica sol (two The silicon oxide content is 30 wt%, the average particle size is 50 nm) and 14 g of urea hydrogen peroxide are stirred until uniform, and the weight of the polishing solution is adjusted to 700 g with deionized water, and the pH value of the polishing liquid is adjusted to 3.8 with phosphoric acid. Using the IC1000-XY / SUBA IV20 type composite polishing pad of Rodel Company, the polishing test was carried out under the conditions of polishing pressure 0.5psi, polishing relative motion speed 1m / s, and polishing liquid flow rate 70mL / min through CETR CP4 polishing tester. By measuring the change of the quality of the wafer before and after polishing, and considering the density and area of ​​the wafer, the polishing rate of the embodiment is obtain...

Embodiment 2

[0043] Preparation of 700g polishing liquid: take 7g serine, add deionized water under stirring, add 0.07g sodium dodecyl benzotriazole sulfonate and 1.4g potassium citrate and stir until clear, then add 14g silica sol (dioxide The silicon content is 30 wt%, the average particle size is 50 nm) and 14 g of urea hydrogen peroxide are stirred until uniform, and the weight of the polishing solution is adjusted to 700 g with deionized water, and the pH value of the polishing solution is adjusted to 3.8 with phosphoric acid. Using the IC1000-XY / SUBA IV20 type composite polishing pad of Rodel Company, the polishing test was carried out under the conditions of polishing pressure 0.5psi, polishing relative motion speed 1m / s, and polishing liquid flow rate 70mL / min through CETR CP4 polishing tester. By measuring the change of the quality of the wafer before and after polishing, and considering the density and area of ​​the wafer, the polishing rate of the embodiment is obtained, and the ...

Embodiment 3

[0045] Preparation of 700g polishing liquid: take 7g glutamic acid, add deionized water under stirring, add 0.28g fatty alcohol polyoxyethylene ether sodium sulfate and 1.4g sodium hydrogen phosphate and stir until clear, then add 14g silica sol (silicon dioxide) content of 30 wt%, average particle size of 50 nm) and 14 g of peracetic acid were stirred until uniform, fixed to 700 g with deionized water, and the pH of the polishing solution was adjusted to 3.8 with phosphoric acid. Using the IC1000-XY / SUBA IV20 type composite polishing pad of Rodel Company, the polishing test was carried out under the conditions of polishing pressure 0.5psi, polishing relative motion speed 1m / s, and polishing liquid flow rate 70mL / min through CETR CP4 polishing tester. By measuring the change of the quality of the wafer before and after polishing, and considering the density and area of ​​the wafer, the polishing rate of the embodiment is obtained, and the change of the copper surface roughness ...

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Abstract

The invention discloses a copper chemical and mechanical polishing combination, which belongs to the technical field of microelectronic auxiliary materials and ultra-precision machining processes. The copper chemical and mechanical polishing combination comprises abrasive particles, an oxidant, a complexing agent, a polishing accelerating agent and a pH regulator. The copper chemical and mechanical polishing combination is characterized by further comprising a long chain corrosion inhibitor and a surface active agent. By using the polishing combination provided by the invention, surface residues, particularly surface granular residues, can be obviously decreased; surface corrosion defects can be obviously decreased; a higher removal speed rate is obtained; and the polishing combination provided by the invention further has the advantages of simple process, cheap price, low cost and the like.

Description

technical field [0001] The invention belongs to the technical field of microelectronic auxiliary materials and ultra-precision processing technology, and particularly relates to a copper chemical mechanical polishing composition. Background technique [0002] Chemical mechanical polishing is currently the only planarization technology that solves the planarization of integrated circuit wiring. At present, a number of related patent technologies have been disclosed at home and abroad, such as 200610014301.5, 201010543029.6, US2005 / 0074976A1, WO2009 / 048203A1 and US2009 / 0215266A1. With the continuous development of microelectronics technology, integrated circuits are developing in the direction of high integration and miniaturization of feature size. In order to minimize the severe interconnect delay due to the decreasing feature size, in the integrated circuit manufacturing process, there has been a gradual trend to use lower dielectric constant dielectric materials and lower ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02C23F3/04
Inventor 顾忠华龚桦王宁潘国顺
Owner SHENZHEN LEAGUER MATERIAL
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