Schottky field effect transistor and manufacturing method thereof

Abstract

The invention discloses a Schottky field effect transistor and a manufacturing method thereof, which belong to the technical field of semiconductors. The Schottky field effect transistor comprises a substrate. The first end part of the substrate is a stepped groove. The Schottky field effect transistor further comprises a drain structure arranged on the second end part of the substrate, a source structure which is arranged on the first end part and comprises a metal silicide, a channel structure which is arranged above the substrate and between the source structure and the drain structure, anda gate structure arranged on the channel structure. According to the invention, the first end part of the substrate is the stepped recess; the source structure is arranged in the stepped recess; thedrain structure is arranged on the second end part of the substrate; the gate structure is arranged on the channel structure between the source structure and the drain structure; due to the fact thatthe source structure is arranged in the stepped groove of the substrate, the barrier width at the source structure becomes smaller when the Schottky field effect transistor is turned on; the tunnelingcurrent of the device is increased; and the channel current of the device in on-state is increased.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a Schottky field effect transistor and a manufacturing method thereof. Background technique [0002] Silicon (Si)-based Schottky barrier Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), also known as Schottky field effect transistor, which uses Schottky barrier metal The silicide replaces the source and drain regions formed by N-type ion implantation or P-type ion implantation in traditional MOSFET devices. [0003] The working characteristics of the Schottky field effect transistor are based on the direct tunneling effect of the Schottky barrier formed by the carriers between the source region and the channel, and the width of the barrier is controlled by the gate voltage. When the barrier is thin enough, carriers are injected into the channel from the source region through the Schottky barrier at the metal silicide interface under an appropriate sou...

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Problems solved by technology

[0004] The embodiment of the present application provides a Schottky field effect transistor and its manufacturing method, which can solve the problem of large leakage current and parasitic current in the off state of the Schottky field effect transistor provided in the related art

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