Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical plating protection method of copper back plate water path

An electroless plating, copper backplane technology, applied in liquid chemical plating, sputtering plating, ion implantation plating, etc., can solve the problems of reducing the thermal conductivity of copper backplane, polluting cooling water, clogging of circulating pipes, etc. Excellent anti-oxidation performance, improve cooling performance, reduce the effect of oxidation corrosion

Inactive Publication Date: 2019-09-27
FUJIAN ACETRON NEW MATERIALS CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the copper backplane works at a relatively high temperature for a long time during the sputtering process, after many cycles of use, the copper on the surface of the copper backplane waterway contacts with oxygen, carbon dioxide, and water vapor for a long time to produce a patina. Oxygen will also generate copper oxide under high temperature conditions, and the formed oxide film reduces the thermal conductivity of the copper backplane, and the oxide film layer is easy to fall off and pollute the cooling water, causing blockage of the circulation pipeline
[0005] Nowadays, in order to improve the cooling performance of the copper backplane, an internal waterway is usually set in the copper backplane, and the cooling water flowing continuously in the waterway is used to cool the entire target assembly. Because the waterway of the copper backplane is in direct contact with water, it is extremely It is easy to form an oxide film, block the water pipe, and reduce the cooling effect of the circulation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical plating protection method of copper back plate water path
  • Chemical plating protection method of copper back plate water path
  • Chemical plating protection method of copper back plate water path

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] 1) First degreasing: use OY-27 type cold degreasing agent (6% by mass) and potassium sodium tartrate plus polyamine (10% by mass) mixed aqueous solution (the rest is water) to clean the copper backboard waterway Soak at room temperature for 15 minutes;

[0062] Second degreasing: use 305 alloy degreasing powder solution with a concentration of 120g / L, and soak the copper backplane waterway for 30 minutes at a high temperature of 90°C.

[0063] Use deionized water to clean the copper backplane waterway until there are no water drops on the surface of the copper backplane waterway.

[0064] 2) Pass the plating solution into the copper backboard water channel after degreasing, and the plating solution includes the following components: glyceryl ether 300g / L, silver sulfate 60g / L, sodium hypophosphite 50g / L, ammonium carbonate 300g / L , polydimethylsiloxane 1g / L, sodium benzoate 0.4g / L and the remainder of water;

[0065] Control the circulation flow rate of the plating so...

Embodiment 2

[0068] 1) First degreasing: use OY-27 type cold degreasing agent (4% by mass) and potassium sodium tartrate plus polyamine (8% by mass) mixed aqueous solution (the rest is water) to clean the copper backboard waterway Soak at room temperature for 15 minutes;

[0069] The second degreasing: use 305 alloy degreasing powder solution with a concentration of 80g / L, and soak the copper backboard waterway for 30min at a high temperature of 70°C.

[0070] Use deionized water to clean the copper backplane waterway until there are no water drops on the surface of the copper backplane waterway.

[0071] 2) Pass the plating solution to the water channel of the copper backboard after degreasing, and the plating solution includes the following components: 900g / L of glycerol ether, 80g / L of silver nitrate, 50g / L of sodium hypophosphite, and 300g / L of ammonium carbonate , polydimethylsiloxane 5g / L, sodium benzoate 0.4g / L and the rest of the water;

[0072] Control the circulation flow rate ...

Embodiment 3

[0075] 1) First degreasing: use OY-27 type cold degreasing agent (6% by mass) and potassium sodium tartrate plus polyamine (10% by mass) mixed aqueous solution (the rest is water) to clean the copper backboard waterway Soak at room temperature for 15 minutes;

[0076] The second degreasing: use 305 alloy degreasing powder solution with a concentration of 100g / L, and soak the copper backboard waterway for 30 minutes at a high temperature of 80°C.

[0077] Use deionized water to clean the copper backplane waterway until there are no water drops on the surface of the copper backplane waterway.

[0078] 2) Lead the plating solution to the copper backboard waterway after degreasing, and the plating solution includes the following components: ethylene glycol 800g / L silver nitrate 30g / L, potassium hypophosphite 50g / L, ammonium carbonate 100g / L , polydimethylsiloxane 3g / L, sodium benzoate 0.4g / L and the balance of water.

[0079] Control the circulation flow rate of the plating solu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
concentrationaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a chemical plating protection method of a copper back plate water path, and belongs to the technical field of target material preparing. The chemical plating protection method of the copper back plate water path comprises the following steps that the copper back plate water path is subjected to oil removal treatment; a plating solution is led into the copper back plate water path obtained after oil removal treatment for the redox reaction; deposition is carried out on the surface of the copper back plate water path obtained after oil removal treatment to form a coating, and through cleaning and drying, the copper back plate water path protection coating is obtained; and the plating solution circularly flows and comprises silver salt, a reducing agent, a complexing agent, a surface tension conditioning agent, an organic solvent and water. According to the chemical plating protection method of the copper back plate water path, the silver coating can be rapidly prepared on the surface of the copper back plate water path, and the oxidation resistance and the cooling performance of the copper back plate can be improved.

Description

technical field [0001] The invention relates to the technical field of target material preparation, in particular to an electroless plating protection method for a copper backplane waterway. Background technique [0002] Sputtering is one of the main technologies for preparing thin film materials. Researchers have been working to improve the efficiency of magnetron sputtering technology and expand its application range. The magnetron sputtering technology uses the ions generated by the ion source to accelerate and gather in a vacuum to form a high-speed ion beam, which bombards the surface of the target, and the kinetic energy exchange between the ions and the atoms on the solid surface makes the target atoms near the surface obtain Sufficient momentum of the outward motion, away from the target, is sputtered, and atoms from the target surface are subsequently deposited on the substrate surface. [0003] Magnetron sputtering has the following significant advantages: the bon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/44C23C14/35
CPCC23C14/3414C23C14/35C23C18/1844C23C18/44
Inventor 张科陈钦忠叶开满池铭浩
Owner FUJIAN ACETRON NEW MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com