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Wafer processing method

A processing method and wafer technology, applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as transfer between processes that cannot be used, pick-up and lamination damage, large warping deformation, etc., to achieve Reduce the risk of fragmentation, improve stress distribution, and reduce the effect of internal stress

Active Publication Date: 2019-09-20
浙江荷清柔性电子技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, for a flexible chip with a thinning thickness of less than 50 μm, due to its thin thickness and no support body, the warping deformation is large, and it is prone to damage during picking and bonding, resulting in a decrease in packaging yield
Therefore, for flexible chips with a thinning thickness of less than 50 μm, conventional methods cannot be used for transfer between processes.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] (1) Thinning the wafer by grinding the back side of the original wafer: adopting a fully automatic grinding and polishing machine that is DISCO DGP8761 with the ability to process wafers of 12 inches and below; The 12-inch raw wafer 110 is ground and polished to obtain an ultra-thin wafer 111 with a thickness of 15 μm.

[0056] (2) The support film 130 is pasted on the back surface 114 of the ultra-thin wafer 111 after grinding by using the dicing iron ring 140 . The support film 130 includes an organic film layer 132 made of polyimide, an adhesive layer 134 and a release film layer 136. The release film layer 136 is torn off during the stretching process. After the stretching is completed, the ultra-thin wafer The back surface 114 of the circle 111 is pasted with the adhesive layer 134 of the supporting film 130 and the organic film layer 132 . The material of the organic film layer 132 is polyimide.

[0057] (3) Cut off the redundant supporting film 130 along the ce...

Embodiment 2

[0063] (1) Thinning the wafer by grinding the back side of the original wafer: using a fully automatic grinding and polishing machine that is ACCRETECH PG3000RMX with the ability to process wafers of 12 inches and below, the graphic surface 112 is pasted with a protective film 120 The 8-inch raw wafer 110 is ground and polished to obtain an ultra-thin wafer 111 with a thickness of 20 μm.

[0064] (2) The support film 130 is pasted on the back surface 114 of the ultra-thin wafer 111 after grinding by using the dicing iron ring 140 . The support film 130 includes an organic film layer 132 made of polyimide, an adhesive layer 134 and a release film layer 136. The release film layer 136 is torn off during the stretching process. After the stretching is completed, the ultra-thin wafer The back surface 114 of the circle 111 is pasted with the adhesive layer 134 of the supporting film 130 and the organic film layer 132 . The material of the organic film layer 132 is polyimide.

[0...

Embodiment 3

[0071] (1) Thinning the wafer by grinding the back side of the original wafer: adopting a fully automatic grinding and polishing machine that is DISCO DGP8761 with the ability to process wafers of 12 inches and below; The 8-inch raw wafer 110 is ground and polished to obtain an ultra-thin wafer 111 with a thickness of 35 μm.

[0072] (2) The support film 130 is pasted on the back surface 114 of the ultra-thin wafer 111 after grinding by using the dicing iron ring 140 . The support film 130 includes an organic film layer 132 made of polyimide, an adhesive layer 134 and a release film layer 136. The release film layer 136 is torn off during the stretching process. After the stretching is completed, the ultra-thin wafer The back surface 114 of the circle 111 is pasted with the adhesive layer 134 of the supporting film 130 and the organic film layer 132 . The material of the organic film layer 132 is polyimide.

[0073] (3) Cut off the redundant supporting film 130 along the cen...

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Abstract

The invention provides a novel wafer processing method. A supporting film is attached to the back surface of an ultra-thin wafer after thinning, so that the supporting film and the ultra-thin wafer are fused into a whole, the internal stress of the ultra-thin wafer is redistributed, and the chip breaking risk is reduced. After the wafer is cut into a chip, the supporting film is still integrated with the chip, so that the chip breaking problem of the chip in the subsequent packaging processes of chip mounting, wire bonding and the like is improved.

Description

technical field [0001] The invention relates to the technical field of wafer processing, in particular to the support and protection technology in the cutting, transferring and packaging processes of thinned ultra-thin wafers. Background technique [0002] In recent years, flexible electronics technology has become a research hotspot. The so-called flexible electronics is an emerging electronic technology that manufactures electronic components of organic or inorganic materials on flexible and ductile plastic or thin metal substrates. Compared with traditional electronic devices, flexible electronics requires chips to have a certain ability to adapt to curved surfaces, which requires chips to be as thin as possible and have a certain degree of flexibility. [0003] Relevant studies have shown that wafers with a thinning thickness of more than 300 μm have absolute rigidity and cannot be bent; wafers with a thinning thickness in the range of 100 to 300 μm have obvious rigidit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/78
CPCH01L21/78H01L21/6836H01L2221/68327H01L2221/68345H01L2221/6835Y02P70/50
Inventor 刘东亮缪炳有滕乙超魏瑀宋冬生
Owner 浙江荷清柔性电子技术有限公司
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